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Número de pieza | LH51BV1000J | |
Descripción | CMOS 1M (128K x 8) Static Ram | |
Fabricantes | Sharp Electrionic Components | |
Logotipo | ||
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No Preview Available ! LH51BV1000J
CMOS 1M (128K × 8) Static Ram
FEATURES
• Access time: 70 ns (MAX.)
• Current consumption:
Operating: 30 mA (MAX.)
5 mA (MAX.) (tRC, tWC = 1 µs)
Standby: 60 µA (MAX.)
• Data Retention:
1.0 µA (MAX.) (VCCDR = 3 V, TA = 25°C)
• Single power supply: 2.7 V to 3.6 V
• Operating temperature: -25°C to +85°C
• Fully-static operation
• Three-state output
• Not designed or rated as radiation
hardened
• Package: 32-pin 6 × 10 mm CSP
• N-type bulk silicon
DESCRIPTION
The LH51BV1000JY is a static RAM organized as
131,072 × 8 bits which provides low power standby
mode. It is fabricated using silicon-gate CMOS process
technology.
PIN CONNECTIONS
1 23 4567 8
A A2 A3 A1 NC A4 A5
B I/O1 A0 I/O2 A12 A6 A7
C GND I/O3
A14 A16
D I/O4 I/O5
A15 VCC
E I/O7 I/O8 I/O6 CE2 A13 WE
F A10 OE CE1 A8 A11 A9
51BV1000-1
Figure 1. Pin Connections for CSP Package
1
1 page CMOS 1M (128K × 8) Static RAM
LH51BV1000J
DATA RETENTION CHARACTERISTICS (TA = -25°C to +850°C)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.1 MAX. UNIT NOTES
Data retention
supply voltage
Data retention
supply current
VCCDR
ICCDR
CE2 ≤ 0.2 V or
CE1 ≥ VCCDR - 0.2 V
VCCDR = 3 V
CE2 ≤ 0.2 V or
CE1 ≥ VCCDR - 0.2 V
TA = 25°C
TA = 40°C
Chip enable
setup time
tCDR
Chip enable
hold time
tR
NOTES:
1. Typical value at TA = 25°C
2. CE2 ≥ VCCDR - 0.2 V or CE2 ≤ 0.2 V
PIN CAPACITANCE (TA = 25°C, f = 1 MHz)
PARAMETER
SYMBOL CONDITIONS MIN.
TYP.
2.0
0
5
MAX.
0.5
UNIT
3.6 V
1.0 µA
3.0
50 µA
ms
ms
NOTE
2
2
Input capacitance
CIN
VIN = 0 V 8 pF
I/O capacitance
CI/O VI/O = 0 V 10 pF
NOTE:
1. This parameter is sampled and not production tested.
1
1
5
5 Page CMOS 1M (128K × 8) Static RAM
ORDERING INFORMATION
LH51BV1000J
LH51BV1000J
Y
- ## LL
Device Type Package Speed Power
Low-Low power standby
70 ns Access Time (ns)
32-pin, 6 x 10 mm CSP (FBGA032-P-0610)
CMOS 1M (124K x 8) Static RAM
Example: LH51BV1000JY-70LL (CMOS 1M (124K x 8) Static RAM, 70 ns, Low-Low power standby, 32-pin CSP)
51BV1000-7
11
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet LH51BV1000J.PDF ] |
Número de pieza | Descripción | Fabricantes |
LH51BV1000J | CMOS 1M (128K x 8) Static Ram | Sharp Electrionic Components |
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