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PDF BCR3KM-12 Data sheet ( Hoja de datos )

Número de pieza BCR3KM-12
Descripción Triac Low Power Use
Fabricantes Renesas Technology 
Logotipo Renesas Technology Logotipo



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No Preview Available ! BCR3KM-12 Hoja de datos, Descripción, Manual

BCR3KM-12
Triac
Low Power Use
Features
IT(RMS) : 3 A
VDRM : 600 V
www.DataSheet4U.cIFoGmT I, IRGT I, IRGT III : 15 mA (10 mA)Note3
Outline
TO-220FN
1
23
REJ03G0312-0200
Rev.2.00
Nov.09.2004
Insulated Type
Planar Passivation Type
UL Recognized : Yellow Card No. E223904
File No. E80271
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Electric rice cooker, electric pot, and controller for other heater
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Rev.2.00, Nov.09.2004, page 1 of 6

1 page




BCR3KM-12 pdf
BCR3KM-12
Holding Current vs.
Junction Temperature
103
7 Typical Example
5
4
3
2
www.DataSheet4U.com
102
7
5
4
3
2
101
60 40 20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
60 40 20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7 IRGT III Typical Example
5
4 IRGT I
3 IFGT I
2
102
7
5
4
3
2
101
100 2 3 4 5 7 101 2 3 4 5 7 102
Gate Current Pulse Width (µs)
Latching Current vs.
Junction Temperature
103
7
5
3 Distribution
2 T2+, G–
102 Typical Example
7
5
3
2
101
7
5
3
2
T2+, G+
T2–, G–
Typical Example
100
60 40 20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
140 Tj = 125°C
120
100
III Quadrant
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Characteristics Test Circuits
66
6V A
V 330
Test Procedure I
6
6V A
V 330
Test Procedure II
6V A
V 330
Test Procedure III
Rev.2.00, Nov.09.2004, page 5 of 6

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