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PDF BB506M Data sheet ( Hoja de datos )
| Número de pieza | BB506M | |
| Descripción | Built in Biasing Circuit MOS FET IC UHF RF Amplifier | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BB506M (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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BB506M
Built in Biasing Circuit MOS FET IC
UHF RF Amplifier
Features
• Built in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain
www.DataSheet4U.cPoGm= 24 dB typ. (f = 900 MHz)
• Low noise
NF = 1.4 dB typ. (f = 900 MHz)
• Low output capacitance
Coss = 1.1 pF typ. (f = 1 MHz)
• Provide mini mold packages: CMPAK-4 (SOT-343mod)
Outline
Notes:
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
2
3
1
4
1. Marking is “FS-“.
2. BB506M is individual type number of RENESAS BBFET.
REJ03G1604-0100
Rev.1.00
Nov 26, 2007
1. Source
2. Gate1
3. Gate2
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
VG2S
Drain current
Channel power dissipation
ID
PchNote3
Channel temperature
Tch
Storage temperature
Tstg
Notes: 3. Value on the glass epoxy board (50 mm × 40 mm × 1 mm).
Ratings
6
+6
–0
+6
–0
30
300
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
mA
mW
°C
°C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
REJ03G1604-0100 Rev.1.00 Nov 26, 2007
Page 1 of 8
1 page  
BB506M
Power Gain vs. Gate Resistance
50
VDS = 5 V
VG1 = 5 V
40 VG2S = 4 V
f = 900 MHz
30
20
10
www.DataSheet4U.com
0
10 100 1000
Gate Resistance RG (kΩ)
Power Gain vs.
Gate2 to Source Voltage
25
20
15
10
VDS = 5 V
5 VG1 =5 V
RG = 100 kΩ
f = 900 MHz
0
123 4
Gate2 to Source Voltage VG2S (V)
Gain Reduction vs.
Gate2 to Source Voltage
40
35
VDS = 5 V
VG1 = 5 V
30
RG = 100 kΩ
f = 900 MHz
25
20
15
10
5
0
0 1 234
Gate2 to Source Voltage VG2S (V)
Noise Figure vs. Gate Resistance
5
VDS = 5 V
VG1 = 5 V
4 VG2S = 4 V
f = 900 MHz
3
2
1
0
10
100 1000
Gate Resistance RG (kΩ)
Noise Figure vs.
5 Gate2 to Source Voltage
VDS = 5 V
VG1 = 5 V
4 RG = 100 kΩ
f = 900 MHz
3
2
1
0
1234
Gate2 to Source Voltage VG2S (V)
REJ03G1604-0100 Rev.1.00 Nov 26, 2007
Page 5 of 8
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BB506M.PDF ] | |
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