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Número de pieza | 4511GD | |
Descripción | AP4511GD | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 4511GD (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Electronics Corp.
▼ Low Gate Charge
▼ Fast Switching Speed
www.DataSheet▼4U.PcoDmIP-8 Package
Description
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
AP4511GD
RoHS-compliant Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
35V
25mΩ
7A
-35V
40mΩ
-6.1A
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
35 -35
±20 ±20
7 -6.1
5.7 -5
30 -30
2.0
0.016
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
62.5
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200805262
1 page N-Channel
16
I D =7A
V DS =28V
12
8
www.DataSheet4U.com 4
AP4511GD
f=1.0MHz
1000
C iss
C oss
C100 rss
0
0 5 10 15 20 25
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
10
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10
100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
DC
0.01
0.1 1 10 100
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =90oC/W
0.001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
10 100
Fig 10. Effective Transient Thermal Impedance
30
V DS =5V
20
T j =25 o C
T j =150 o C
10
VG
4.5V
QG
QGS
QGD
0
024
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
Charge
Q
Fig 12. Gate Charge Waveform
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet 4511GD.PDF ] |
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