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PDF FDZ7296 Data sheet ( Hoja de datos )
| Número de pieza | FDZ7296 | |
| Descripción | 30V N-Channel PowerTrench BGA MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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November 2004
FDZ7296
30V N-Channel PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced PowerTrench process
with state-of-the-art BGA packaging, the FDZ7296
www.DataSheet4U.com
minimizes
MOSFET
both PCB
embodies
space and RDS(ON).
a breakthrough in
This BGA
packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
Applications
• High-side Mosfet in DC-DC converters for Server
and Notebook applications
Features
11 A, 30 V.
RDS(ON) = 8.5 mΩ @ VGS = 10 V
RDS(ON) = 12 mΩ @ VGS = 4.5 V
• Occupies only 0.10 cm2 of PCB area:
1/3 the area of SO-8.
• Ultra-thin package: less than 0.80 mm height
when mounted to PCB.
• High performance trench technology for extremely
low RDS(ON)
• Optimized for low Qg and Qgd to enable fast
switching and reduce CdV/dt gate coupling
D DD
S SS
S SS
Pin 1
Pin 1
S SS
GSS
DD D
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJB Thermal Resistance, Junction-to-Ball
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
7296
FDZ7296
7’’
D
G
S
Ratings
30
±20
11
20
2.1
–55 to +150
60
6.3
0.6
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
©2004 Fairchild Semiconductor Corporation
FDZ7296 Rev B (W)
1 page  
Typical Characteristics
10
ID = 11A
8
6
www.DataSheet4U.com
4
2
VDS = 10V
20V
15V
0
0 5 10 15 20 25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1ms
10ms
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 108oC/W
TA = 25oC
100ms
1s
10s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
2000
1600
1200
f = 1MHz
VGS = 0 V
Ciss
800
Coss
400
Crss
0
0
5 10 15
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 108°C/W
40 TA = 25°C
30
20
10
0
0.01
0.1
1 10
t1, TIME (sec)
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.001
SINGLE PULSE
0.01
0.1
1
t1, TIME (sec)
10
RθJA(t) = r(t) * RθJA
RθJA = 108 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
100 1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ7296 Rev B(W)
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FDZ7296.PDF ] | |
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