DataSheet.es    


PDF 18NQ11T Data sheet ( Hoja de datos )

Número de pieza 18NQ11T
Descripción PHX18NQ11T
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



Hay una vista previa y un enlace de descarga de 18NQ11T (archivo pdf) en la parte inferior de esta página.


Total 12 Páginas

No Preview Available ! 18NQ11T Hoja de datos, Descripción, Manual

PHX18NQ11T
N-channel TrenchMOS™ standard level FET
M3D308 Rev. 01 — 13 February 2004
Product data
1. Product profile
www.DataSheet4U.com
1.1 Description
N-channel enhancement mode field-effect power transistor in a fully isolated plastic
package using TrenchMOS™ technology.
1.2 Features
s Low on-state resistance
s Isolated mounting base
s Fast switching
s Low thermal resistance
1.3 Applications
s DC-to-DC converters
s Switched-mode power supplies
1.4 Quick reference data
s VDS 110 V
s Ptot 31.2 W
s ID 12.5 A
s RDSon 90 m
2. Pinning information
Table 1: Pinning - SOT186A (TO-220F), simplified outline and symbol
Pin Description
Simplified outline
1 gate (g)
2 source (s)
mb
3 drain (d)
mb mounting base;
isolated
Symbol
d
g
MBB076
s
1 2 3 MBK110
SOT186A (TO-220F)

1 page




18NQ11T pdf
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
www.DataSheet4U.com
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = 55 °C
110 - - V
99 - - V
VGS(th) gate-source threshold voltage
ID = 1 mA; VDS = VGS; Figure 9
Tj = 25 °C
Tj = 150 °C
Tj = 55 °C
23
1.2 -
--
4V
-V
4.4 V
IDSS drain-source leakage current
IGSS gate-source leakage current
VDS = 100 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±10 V; VDS = 0 V
- - 1 µA
- - 500 µA
- 10 100 nA
RDSon drain-source on-state resistance
VGS = 10 V; ID = 9 A; Figure 7 and 8
Tj = 25 °C
Tj = 150 °C
- 67 90 m
- 148 198 m
Dynamic characteristics
Qg(tot) total gate charge
ID = 3 A; VDD = 80 V; VGS = 10 V; Figure 13
- 21 - nC
Qgs gate-source charge
- 2.5 - nC
Qgd gate-drain (Miller) charge
- 8 - nC
Ciss input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11 - 635 - pF
Coss output capacitance
- 105 - pF
Crss
td(on)
tr
reverse transfer capacitance
turn-on delay time
rise time
VDD = 50 V; RL = 15 ; VGS = 10 V; RG = 5.6
-
-
-
60 -
6-
12 -
pF
ns
ns
td(off)
turn-off delay time
- 20 - ns
tf fall time
- 10 - ns
Source-drain diode
VSD source-drain (diode forward) voltage IS = 12 A; VGS = 0 V; Figure 12
trr reverse recovery time
IS = 12 A; dIS/dt = 100 A/µs; VGS = 0 V
- 0.87 1.2 V
- 55 - ns
Qr recovered charge
- 135 - nC
9397 750 12915
Product data
Rev. 01 — 13 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
5 of 12

5 Page





18NQ11T arduino
Philips Semiconductors
PHX18NQ11T
N-channel TrenchMOS™ standard level FET
10. Data sheet status
Level Data sheet status[1]
I Objective data
Product status[2][3]
Development
II Preliminary data
Qualification
III Product data
www.DataSheet4U.com
Production
Definition
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
12. Disclaimers
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
13. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: [email protected].
9397 750 12915
Product data
Rev. 01 — 13 February 2004
Fax: +31 40 27 24825
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
11 of 12

11 Page







PáginasTotal 12 Páginas
PDF Descargar[ Datasheet 18NQ11T.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
18NQ11TPHX18NQ11TNXP Semiconductors
NXP Semiconductors

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar