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PDF FPD7612P70 Data sheet ( Hoja de datos )

Número de pieza FPD7612P70
Descripción HI-FREQUENCY PACKAGED PHEMT
Fabricantes Filtronic Compound Semiconductors 
Logotipo Filtronic Compound Semiconductors Logotipo



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PRELIMINARY
FPD7612P70
HI-FREQUENCY PACKAGED PHEMT
PERFORMANCE
20 dBm Output Power (P1dB)
21 dB Power Gain (G1dB) at 1.85 GHz
0.7 dB Noise Figure at 1.85 GHz
30 dBm Output IP3
50% Power-Added Efficiency at 1.85 GHz
Useable Gain to 24 GHz
Evaluation Boards Available
www.DataSheet4U.com
GATE LEAD IS ANGLED
DESCRIPTION AND APPLICATIONS
The FPD7612P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron
Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 200 µm Schottky barrier Gate, defined by
high-resolution stepper-based photolithography. . The FPD7612 is also available in die form .
Typical applications include gain blocks and medium power stages for applications to 26 GHz.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ Max
RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL (except as noted)
Power at 1dB Gain Compression
Gain at 1dB Gain Compression
Power-Added Efficiency
Maximum Stable Gain (S21/S12)
f = 12 GHz
P1dB
SSG
PAE
MSG
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
VDS = 5 V; IDS = 50% IDSS
20
21
45
14
f = 18 GHz
10
Noise Figure
Output Third-Order Intercept Point
POUT = 9 dBm SCL
NF
IP3
VDS = 5 V; IDS = 25% IDSS
VDS = 5V; IDS = 50% IDSS
0.7
30
Units
dBm
dB
%
dB
dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
θJC
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.2 mA
IGS = 0.2 mA
IGD = 0.2 mA
VDS > 3V
45 60
120
80
1
0.7 0.9
12 14
14.5 16
335
75 mA
mA
mS
10 µA
1.3 V
V
V
°C/W
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtrionic.co.uk/semis
Revised: 7/15/05

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