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PDF FPD750P100 Data sheet ( Hoja de datos )

Número de pieza FPD750P100
Descripción 0.5W PACKAGED POWER PHEMT
Fabricantes Filtronic Compound Semiconductors 
Logotipo Filtronic Compound Semiconductors Logotipo



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No Preview Available ! FPD750P100 Hoja de datos, Descripción, Manual

FEATURES
26.5 dBm Linear Output Power
18.5 dB Power Gain at 2 GHz
11.5 dB Maximum Stable Gain at 10 GHz
36 dBm Output IP3
45% Power-Added Efficiency at 2 GHz
FPD750P100
0.5W PACKAGED POWER PHEMT
www.DataSheet4U.com
DESCRIPTION AND APPLICATIONS
The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor
(PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepper-
based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize
performance. The epitaxial structure and processing have been optimized for reliable high-power
applications. The FPD750P100 also features Si3N4 passivation and is also available in die form and
in the low cost plastic SOT89, SOT343, and DFN plastic packages.
Typical applications include commercial and other narrowband and broadband high-performance
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min Typ Max Units
UNLESS OTHERWISE NOTED, RF SPECIFICATIONS MEASURED AT f = 2 GHz USING CW SIGNAL
Power at 1dB Gain Compression
Power Gain at P1dB
Maximum Stable Gain (S21/S12)
P1dB
G1dB
SSG
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
VDS = 8 V; IDS = 50% IDSS
f = 2 GHz
25.0 26.5
18.0 18.5
22.0 23.0
dBm
dB
dB
f = 10 GHz
10.5 11.5
dB
Power-Added Efficiency
PAE
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
IP3
VDS = 8 V; IDS = 50% IDSS;
POUT = P1dB
VDS = 8V; IDS = 50% IDSS
Matched for optimal power
45 %
36 dBm
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
IDSS
IMAX
GM
IGSO
|VP|
|VBDGD|
θJC
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
IGD = 0.75 mA
VDS > 6V
185 230 280 mA
375 mA
200 mS
1 15 µA
0.7 1.0 1.3
V
14.5 16.0
V
48 °C/W
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Released: 6/27/05

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