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PDF FPD750DFN Data sheet ( Hoja de datos )
| Número de pieza | FPD750DFN | |
| Descripción | LOW NOISE HIGH LINEARITY PACKAGED PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de FPD750DFN (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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FPD750DFN
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
Datasheet v3.0
FEATURES (1850MHZ):
• 24 dBm Output Power (P1dB)
• 20 dB Small-Signal Gain (SSG)
• 0.3 dB Noise Figure
• 39 dBm Output IP3 at 50% Bias
• 45% Power-Added Efficiency
• RoHS compliant
PACKAGE:
RoHS
9
www.DataSheet4U.cGomENERAL DESCRIPTION:
The FPD750DFN is a packaged depletion
mode AlGaAs/InGaAs pseudomorphic High
Electron Mobility Transistor (pHEMT). It
utilizes a 0.25 µm x 750 µm Schottky barrier
Gate, defined by high-resolution stepper-
based photolithography. The recessed and
offset Gate structure minimizes parasitics to
optimize performance, with an epitaxial
structure designed for improved linearity over
a range of bias conditions and input power
levels.
TYPICAL APPLICATIONS:
• Drivers or output stages in PCS/Cellular
base station transmitter amplifiers
• High intercept-point LNAs
• WLL and WLAN systems, and other types
of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
Power at 1dB Gain Compression
P1dB
Small-Signal Gain
SSG
CONDITIONS
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 50% IDSS
MIN
22.5
19
TYP
24
20
MAX
UNITS
dBm
dB
Power-Added Efficiency
Noise Figure
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
Saturated Drain-Source Current
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
PAE
NF
IP3
IDSS
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
VDS = 5 V; IDS = 50% IDSS;
POUT = P1dB
VDS = 5 V; IDS = 50% IDSS
VDS = 5 V; IDS = 25% IDSS
VDS = 5V; IDS = 50% IDSS
Matched for optimal power
Matched for best IP3
VDS = 1.3 V; VGS = 0 V
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
IGS = 0.75mA
IGD = 0.75 mA
45
0.7 1.1
0.3 0.9
%
dB
37 dBm
39
180
230 280
mA
375 mA
200 mS
1 15 µA
0.7 1.0 1.3 V
12 16
V
12 16
V
Note: TAMBIENT = 22°; RF specification measured at f = 1850 MHz using CW signal (except as noted)
Tel: +44 (0) 1325 301111
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
1 page  
NOISE PARAMETERS:
Bias 3V, 50%IDSS
Freq
(GHz)
0.900
1.800
www.DataSheet4U2..c0o0m0
2.200
2.400
2.600
2.800
3.000
3.500
4.000
4.500
5.000
5.500
6.000
Γopt
Mag
Angle
0.509
0.404
0.408
0.402
0.375
0.349
0.302
0.281
0.264
0.244
0.265
0.303
0.312
20.5
52.8
56.5
61.7
70.3
74.1
84.4
96.7
116.1
137.0
162.8
168.7
-176.1
0.342
-165.0
Rn/50
0.082
0.074
0.070
0.067
0.064
0.066
0.064
0.060
0.055
0.056
0.051
0.043
0.049
0.060
FPD750DFN
Datasheet v3.0
Bias 5V, 25%IDSS
Freq
(GHz)
0.900
1.800
2.000
2.200
2.400
2.600
2.800
3.000
3.500
4.000
4.500
5.000
5.500
6.000
Γopt
Mag
Angle
0.520
0.465
0.471
0.458
0.435
0.423
0.355
0.327
0.298
0.246
0.245
0.271
0.279
16.1
36.4
47.4
52.0
60.0
62.1
71.6
80.7
97.0
116.3
144.0
149.5
171.0
0.295
176.4
Rn/50
0.079
0.148
0.069
0.068
0.065
0.067
0.064
0.060
0.056
0.057
0.051
0.041
0.042
0.053
Bias 5V, 50%IDSS
Freq
(GHz)
0.900
1.800
2.000
2.200
2.400
2.600
2.800
3.000
3.500
4.000
4.500
5.000
5.500
6.000
Γopt
Mag Angle
0.512
0.400
0.403
0.385
0.362
0.344
0.299
0.284
0.264
0.236
0.263
0.298
0.323
0.326
21.8
52.8
57.5
63.2
72.0
76.1
86.7
98.0
117.5
139.7
163.7
171.9
-165.6
-163.6
Rn/50
0.096
0.084
0.080
0.077
0.074
0.075
0.072
0.068
0.062
0.064
0.058
0.051
0.062
0.075
Tel: +44 (0) 1325 301111
5
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FPD750DFN.PDF ] | |
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