|
|
PDF FPD750 Data sheet ( Hoja de datos )
| Número de pieza | FPD750 | |
| Descripción | 0.5W POWER PHEMT | |
| Fabricantes | Filtronic Compound Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FPD750 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
0.5W POWER PHEMT
FPD750
Datasheet v3.0
FEATURES:
• 27.5 dBm Linear Output Power at 12 GHz
• 11.5 dB Power Gain at 12 GHz
• 14.5 dB Max Stable Gain at 12 GHz
• 38 dBm Output IP3
• 50% Power-Added Efficiency
LAYOUT:
GENERAL DESCRIPTION:
www.DataSheet4U.cTohme FPD750 is an AlGaAs/InGaAs
pseudomorphic High Electron Mobility
Transistor (PHEMT), featuring a 0.25 µm by
750 µm Schottky barrier gate, defined by high-
resolution stepper-based photolithography.
The double recessed gate structure minimizes
parasitics to optimize performance. The
epitaxial structure and processing have been
optimized for reliable high-power applications.
The FPD750 also features Si3N4 passivation
and is available in the low cost plastic SOT89
SOT343 and DFN packages.
TYPICAL APPLICATIONS:
• Narrowband and broadband high-
performance amplifiers
• SATCOM uplink transmitters
• PCS/Cellular low-voltage high-efficiency
output amplifiers
• Medium-haul digital radio transmitters
ELECTRICAL SPECIFICATIONS1:
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Power at 1dB Gain Compression
P1dB
VDS = 8 V; IDS = 50% IDSS
26.5 27.5
dBm
Maximum Stable Gain (S21/S12)
MSG
VDS = 8 V; IDS = 50% IDSS
13.5 14.5
dB
Power Gain at P1dB
G1dB
VDS = 8 V; IDS = 50% IDSS
10.5 11.5
dB
Power-Added Efficiency
Output Third-Order Intercept Point
(from 15 to 5 dB below P1dB)
PAE
IP3
VDS = 8 V; IDS = 50% IDSS; POUT = P1dB
VDS = 8V; IDS = 50% IDSS
Matched for optimal power; Tuned for best IP3
45
38
40
%
dBm
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
185 230
280
mA
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Gate-Drain Breakdown Voltage
Thermal Resistivity (see Notes)
IMAX
GM
IGSO
|VP|
|VBDGS|
|VBDGD|
θJC
VDS = 1.3 V; VGS ≅ +1 V
VDS = 1.3 V; VGS = 0 V
VGS = -5 V
VDS = 1.3 V; IDS = 0.75 mA
IGS = 0.75 mA
IGD = 0.75 mA
VDS > 6V
12.0
14.5
370
200
10
1.0
14.0
16.0
65
mA
mS
µA
V
V
V
°C/W
Note: 1TAmbient = 22°C; RF specifications measured at f = 12 GHz using CW signal
Tel: +44 (0) 1325 301111
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet FPD750.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FPD750 | 0.5W POWER PHEMT | Filtronic Compound Semiconductors |
| FPD750DFN | LOW NOISE HIGH LINEARITY PACKAGED PHEMT | Filtronic Compound Semiconductors |
| FPD750P100 | 0.5W PACKAGED POWER PHEMT | Filtronic Compound Semiconductors |
| FPD750SOT343 | LOW NOISE HIGH LINEARITY PACKAGED PHEMT | Filtronic Compound Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |