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PDF IHW20N120R2 Data sheet ( Hoja de datos )

Número de pieza IHW20N120R2
Descripción Reverse Conducting IGBT
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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IHW20N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
www.DataSheet4U.cQomualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IHW20N120R2
Maximum Ratings
1200V
20A
1.55V
175°C H20R1202 PG-TO-247-3-21
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1200V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
1200
40
20
60
60
40
20
30
50
130
120
±20
±25
330
-40...+175
-55...+175
260
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 1.2 May 06

1 page




IHW20N120R2 pdf
IHW20N120R2
Soft Switching Series
50A
40A
www.DataSheet4U.c3om0A
20A
VGE=20V
15V
13V
11V
9V
7V
10A
0A
0V 1V 2V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
50A
VGE=20V
40A 15V
13V
11V
30A 9V
7V
20A
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
50A
40A
30A
20A
TJ=175°C
10A 25°C
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
IC=40A
2.0V
1.5V
1.0V
IC=20A
IC=10A
0.5V
0.0V
0°C
50°C
100°C
150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter saturation
voltage as a function of junction
temperature
(VGE =15V)
Power Semiconductors
5
Rev. 1.2 May 06

5 Page





IHW20N120R2 arduino
www.DataSheet4U.com
IHW20N120R2
Soft Switching Series
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
Q
S
Q
F
10% I
rrm
t
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
τ1
r1
Tj (t)
p(t) r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ a n d Stray
capacity C σ
Power Semiconductors
11
Rev. 1.2 May 06

11 Page







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