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PDF 1N6263 Data sheet ( Hoja de datos )
| Número de pieza | 1N6263 | |
| Descripción | SMALL SIGNAL SCHOTTKY DIODE | |
| Fabricantes | Galaxy Semi-Conductor Holdings | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1N6263 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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BL GALAXY ELECTRICAL
SMALL SIGNAL SCHOTTKY DIODE
1N6263
VOLTAGE RANGE: 60 V
POWER DISSIPATION:400 mW
FEATURES
For general purpose applications
Metal silicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices,steering,biasing and coupling diodes for
www.DataShefaets4tUs.cwomitching and low logic level applications
DO - 35(GLASS)
MECHANICAL DATA
Case:JEDEC DO--35,glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Peak reverse voltage
Pow er dissipation (Infinite Heat Sink)
Maximum single cycle surge 10µs square w ave
Junction tenperature
Storage temperature range
1)Valid provided that electrodes are kept at ambient temperature.
Symbols
VRRM
Ptot
IFSM
TJ
TSTG
Value
60.0
4001)
2.0
125
c-55 ---+ 150
UNITS
V
mW
A
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherw ise specified)
Symbols
Reverse breakdow n voltage @ IR=10 A
Leakage current @ VR=50V
Forw ard voltage drop @ IF=1mA
IF=15mA
Junction capacitance @ VR=0V,f=1MHz
Reverse recovery time @ IF=IR=5mA,recover to 0.1 IR
Termal resistance junction to ambient air
VR
IR
VF
VF
CJ
trr
RθJA
Min.
60.0
Document Number 0265002
BLGALAXY ELECTRICAL
Typ.
Max.
UNITS
V
200.0
nA
0.41 V
1.0 V
2.2 pF
1 ns
0.3 /mW
www.galaxycn.com
1.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N6263.PDF ] | |
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