DataSheet.es    


PDF CDS3C30GTH Data sheet ( Hoja de datos )

Número de pieza CDS3C30GTH
Descripción (CDSxCxxGTH) Cera Diode
Fabricantes Epcos 
Logotipo Epcos Logotipo



Hay una vista previa y un enlace de descarga de CDS3C30GTH (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! CDS3C30GTH Hoja de datos, Descripción, Manual

www.DataSheet4U.com
CeraDiode
SMD type, single, case size 0402, 0603 and 1003
Series/Type:
Ordering code:
CDS*C**GTH
B725**D****H***
Date:
Version:
2007-02-20
3
Content of header bars 1 and 2 of data sheet will be automatically entered in headers and footers! Please fill in the
table and then change the color to "white" (or invisible). This ensures that the table disappears for the customer
PDF. To update the data sheet, click on the symbol "Preview" and then "Close". Please do not alter the header or
footer when copying the content.
Identification/Classification 1:(header 1 + top left header bar) CeraDiode
Identification/Classification 2:(header 2 + bottom left header
bar)
SMD type, single, case size 0402, 0603 and 1003
Ordering code:
(top right header bar)
B725**D****H***
Series/Type:
(top right header bar)
CDS*C**GTH
Preliminary data (optional):
(if necessary)
Department:
KB S PE
Published by
Hr. Pürstinger
Rlease signed PE
Release signed QS
Modification/Remarks
New important notes template from Mrs. Kopp have been added
Date:
2007-02-20
© EPCOS AG 2007. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information
contained therein without EPCOS' prior express consent is prohibited.

1 page




CDS3C30GTH pdf
CeraDiode
SMD type, single, case size 0402, 0603 and 1003
B725**D****H***
CDS*C**GTH
CDS3C16GTH
Parameter
Breakdown voltage
Leakage current
Clamping voltage
Capacitance
Symbol
VBR
Ileak
Vclamp
C
Conditions
IBR = 1 mA
Vleak = 5.6 V
IPP = 1 A, 8/20 µs
V = 1 V, f = 1 MHz
Minimum
65
-
-
-
Typical
-
-
-
3
Maximum
-
1
290
5
Unit
V
µA
V
pF
CDS3C30GTH
Parameter
www.DataSheet4U.coBmreakdown voltage
Leakage current
Clamping voltage
Capacitance
Symbol
VBR
Ileak
Vclamp
C
Conditions
IBR = 1 mA
Vleak = 5.6 V
IPP = 1 A, 8/20 µs
V = 1 V, f = 1 MHz
Minimum
50
-
-
-
Typical
-
-
-
10
Maximum
-
1
120
15
Unit
V
µA
V
pF
CDS4C16GTH
Parameter
Breakdown voltage
Leakage current
Clamping voltage
Capacitance
Symbol
VBR
Ileak
Vclamp
C
Conditions
IBR = 1 mA
Vleak = 5.6 V
IPP = 1 A, 8/20 µs
V = 1 V, f = 1 MHz
Minimum
38
-
-
-
Typical
-
-
-
3
Maximum
-
1
146
5
Unit
V
µA
V
pF
Note: Any operating voltage lower than Vleak results in lower leakage current.
Typical characteristics
110
%
90
80
70
60
50
40
30
20
10
0_55
MLV0013-Q-E
70 80 90 100 110 120 130 ˚C 150
TA
Please read Important notes at
the end of this document.
Page 5 of 10
2007-02-20

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet CDS3C30GTH.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
CDS3C30GTH(CDSxCxxGTH) Cera DiodeEpcos
Epcos

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar