(PDF) UPF1060 Datasheet - Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS

Número de pieza	UPF1060
Descripción	Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS
Fabricantes	CREE
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No Preview Available ! UPF1060 60W, 1.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with a minimum output power of 60W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi- Carrier Power Amplifiers in Class A or AB operation. www.DataSheet4U.com • ALL GOLD metal system for highest reliability. • Industry standard package. • Low intermodulation distortion of –30dBc at 60W (PEP). Package Type 440095 PN: UPF1060F Package Type 440134 PN: UPF1060P Page 1 of 10 UPF1060 Rev. 2 1 page -10 -20 www.DataSheet4U.com -30 -40 -50 -60 20 Intermodulation Distortion vs Output Power UPF1060 IDQ = 200 m A 600 m A 400 m A VDD = 26 V f1 = 894.0 MHz f2 = 894.1 MHz 25 30 35 40 45 50 POUT, Output Power (dBm), PEP 55 15 14 13 12 11 10 9 8 20 Power Gain & Efficiency vs Output Power GPE η VDD = 26 V IDQ = 400 mA f = 894 MHz 25 30 35 40 45 POUT, Output Power (dBm) 70 60 50 40 30 20 10 0 50 Page 5 of 10 UPF1060 Rev. 2 5 Page

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PDF UPF1060 Data sheet ( Hoja de datos )