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PDF RN4Z Data sheet ( Hoja de datos )

Número de pieza RN4Z
Descripción HIGH EFFICIENCY RECTIFIER
Fabricantes Galaxy Semi-Conductor 
Logotipo Galaxy Semi-Conductor Logotipo



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No Preview Available ! RN4Z Hoja de datos, Descripción, Manual

BLGALAXY ELECTRICAL
HIGH EFFICIENCY RECTIFIER
RN4Z(Z)
VOLTAGE RANGE: 200 V
CURRENT: 3.5 A
FEATURES
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
www.DataSheaetn4Ud.csoimmilar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
DO - 27
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
VRRM
VRMS
VDC
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
Peak forw ard surge current
IF(AV)
8.3ms single half-sine-w ave
IFSM
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 3.5 A
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance (Note2)
CJ
Typical thermal resistance
(Note2)
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
RN4Z
200
140
200
3.5
120.0
0.92
50.0
1000.0
50
70
30
- 55 ---- + 150
- 55 ---- + 150
UNITS
V
A
A
V
A
ns
pF
www.galaxycn.com
Document Number 0262014
BLGALAXY ELECTRICAL
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