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PDF 5N150UF Data sheet ( Hoja de datos )
| Número de pieza | 5N150UF | |
| Descripción | SGF5N150UF | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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SGF5N150UF
IGBT
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
www.DataSheet4U.com SGF5N150UF is designed for the Switching Power
Supply applications.
Features
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 4.7 V @ IC = 5A
• High Input Impedance
Application
Switching Power Supply - High Input Voltage Off-line Converter
GCE
TO-3PF
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
SGF5N150UF
1500
± 20
10
5
20
62.5
25
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Typ.
--
--
Max.
2.0
40
Units
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
SGF5N150UF Rev. B
1 page  
Package Dimension
www.DataSheet4U.com
TO-3PF (FS PKG CODE AG)
15.50 ±0.20
ø3.60 ±0.20
5.50 ±0.20
3.00 ±0.20
(1.50)
0.85 ±0.03
2.00 ±0.20
2.00 ±0.20
4.00 ±0.20
0.75
+0.20
–0.10
5.45TYP
[5.45 ±0.30]
2.00 ±0.20
5.45TYP
[5.45 ±0.30]
2.00 ±0.20
3.30 ±0.20
0.90
+0.20
–0.10
©2003 Fairchild Semiconductor Corporation
Dimensions in Millimeters
SGF5N150UF Rev. B
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 5N150UF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 5N150UF | SGF5N150UF | Fairchild Semiconductor |
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