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PDF LB11921T Data sheet ( Hoja de datos )

Número de pieza LB11921T
Descripción Monolithic Digital IC Three-Phase Brushless Motor Driver
Fabricantes Sanyo Semicon Device 
Logotipo Sanyo Semicon Device Logotipo



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No Preview Available ! LB11921T Hoja de datos, Descripción, Manual

Ordering number : ENA0604
LB11921T Monolithic Digital IC
Three-Phase Brushless Motor Driver
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The LB11921T is a pre-driver IC designed for variable-speed control of 3-phase brushless motors. It can be used to
implement a motor drive circuit with the desired output capacity (voltage, current) by using discrete transistors for the
output stage. It implements direct PWM drive for minimal power loss. Since the LB11921T includes a built-in VCO
circuit, applications can control the motor speed arbitrarily by varying the external clock frequency.
Functions
Direct PWM drive output
Speed discriminator + PLL speed control circuit
Speed lock detection output
Built-in VCO circuit
Forward/reverse switching circuit
Braking circuit (short braking)
Full complement of on-chip protection circuits, including lock protection, current limiter, and thermal shutdown
protection circuits.
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Maximum supply voltage
Output current
Allowable power dissipation 1
Symbol
VCC max
IO max
Pd max1
Conditions
UH, VH, WH, UL, VL, WL output
Independent IC
Allowable power dissipation 2
Pd max2
Mounted on a circuit board*
Operating temperature
Topr
Storage temperature
Tstg
* Mounted on a specified board: 114.3mm×76.1mm×1.6mm, glass epoxy.
Ratings
8
10
0.4
0.9
-20 to +80
-55 to +150
Unit
V
mA
W
W
°C
°C
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
11707 MS IM 20060327-S00010 No.A0604-1/18

1 page




LB11921T pdf
Package Dimensions
unit : mm (typ)
3253B
9.75
36
19
LB11921T
Pd max - Ta
1.2
Mounted on a specified board:
114.3mm×76.1mm×1.6mm, glass epoxy
1.0
0.9
0.8
1
(0.5)
(0.63)
www.DataSheet4U.com
18
0.18
0.15
0.6
Independent IC
0.4
0.2
0.504
0.224
SANYO : TSSOP36(275mil)
0
-20 0
20 40 60 80 100
Ambient Temperature, Ta -°C
ILB01797
Pin Assignment
36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19
LB11921T
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
Top view
Three-Phase Logic Truth Table (A high (H) input is the state where IN+ > IN–.)
F/R=L
F/R=H
Output
IN1 IN2 IN3 IN1 IN2 IN3 PWM -
1 H L H L H L VH UL
2 H L L L H H WH UL
3 H H L L L H WH VL
4 L H L H L H UH VL
5 L H H H L L UH WL
6 L L H H H L VH WL
No.A0604-5/18

5 Page





LB11921T arduino
LB11921T
Continued from preceding page.
Pin No.
Symbol
Pin Description
21 RF GND Output current detection reference
Connect to GND of the external resistor Rf.
VCC
Equivalent Circuit
21
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RF Output current detection
Connect a low resistance resistor Rf between this
pin and Rf GMD pin.
This resistor sets the maximum output current
IOUT to be 0.26/Rf.
VCC
22
23
GND
GND pin
24 UL Outputs (that are used to drive external
25 UH transistors).
26 VL Duty cycle is controlled on the UH, VH, and WH
27 VH side of these output.
28 WL
29 WH
VCC
30
VCC
Power supply
Connect a capacitor between this pin and ground
for stabilization.
31 IN3- Hall-effect device inputs.
32
IN3+
The input is seen as a high-level input when IN+
VCC
33 IN2- > IN-, and as a low-level input for the opposite
34
IN2+
state.
35 IN1- If noise on the Hall-effect device signals is a
36
IN1+
problem, insert capacitors between the
corresponding IN+ and IN- inputs.
500
32 34 36
24 26 28
25 27 29
500
31 33 35
No.A0604-11/18

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