(PDF) WTC2306 Datasheet - Enhancement Mode Power MOSFET

Número de pieza	WTC2306
Descripción	Enhancement Mode Power MOSFET
Fabricantes	Weitron Technology
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No Preview Available ! N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE Features: * Super High Dense Cell Design For Low RDS(on) RDS(on) < 38mΩ @ VGS = 10V * Rugged and Reliable * Simple Drive Requirement * SOT-23 Package Applications: * Power Management in Notebook Computer * Portable Equipment * Battery Powered System 3 DRAIN 2 SOURCE WTC2306 DRAIN CURRENT 5.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 1 2 3 SOT-23 Maximum Ratings (TA Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Symbol VDS VGS ID IDM Value 30 ±12 5.8 30 Total Power Dissipation (TA=25°C) Maximum Junction-Ambient2 Operating Junction Temperature Range PD RθJA TJ 1.4 140 -55~+150 Storage Temperature Range Tstg -55~+150 Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature www.Dat23aS.. h1Ge-ueinta42rUa2.ncootzmeCedu PCB board by design; not subject to production testing Unit V V A A W °C/W °C °C Device Marking WTC2306 = N06 WEITRON http://www.weitron.com.tw 1/4 Rev.B 17-Aug-09 1 page

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PDF Descargar	[ Datasheet WTC2306.PDF ]

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PDF WTC2306 Data sheet ( Hoja de datos )