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PDF IRF7811WPBF Data sheet ( Hoja de datos )

Número de pieza IRF7811WPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7811WPBF Hoja de datos, Descripción, Manual

PD- 95023A
IRF7811WPbF
HEXFET® Power MOSFET for DC-DC Converters
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
www.DataSheet4U.com • 100% Tested for Rg
• Lead-Free
S1
S2
S3
A
8D
7D
6D
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811W has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811W
dt immunity for
osfyfenrcshproanrtoicuuslaFryElTowapRpDliSc(oan)tiaonnds.high
Cdv/
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS 4.5V)
Pulsed Drain Current
TA = 25°C
TL = 90°C
Power Dissipation
TA = 25°C
TL = 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
VDS
VGS
ID
IDM
PD
TJ, TSTG
IS
ISM
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
RθJA
RθJL
SO-8
G4
5D
Top View
DEVICE CHARACTERISTICS…
RDS(on)
QG
Qsw
Qoss
IRF7811W
9.0m
18nC
5.5nC
12nC
IRF7811W
30
±12
14
13
109
3.1
3.0
–55 to 150
3.8
109
Max.
40
20
Units
V
A
W
°C
A
Units
°C/W
°C/W
08/23/05

1 page




IRF7811WPBF pdf
IRF7811WPbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
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