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PDF P4C170 Datasheet ( Hoja de datos )

Número de pieza P4C170
Descripción (P4C168 - P4C170) ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS
Fabricantes Pyramid Semiconductor Corporation 
Logotipo Pyramid Semiconductor Corporation Logotipo

Total 15 Páginas
		
P4C170 Hoja de datos, Descripción, Manual
P4C168, P4C169, P4C170
ULTRA HIGH SPEED 4K x 4
STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 12/15/20/25/35ns (Commercial)
– 20/25/35/45/55/70ns (P4C168 Military)
Low Power Operation (Commercial)
– 715 mW Active
– 193 mW Standby (TTL Input) P4C168
www.DataSheet4U.co8m3 mW Standby (CMOS Input) P4C168
Single 5V±10% Power Supply
DESCRIPTION
The P4C168, P4C169 and P4C170 are a family of
16,384-bit ultra high-speed static RAMs organized as 4K
x 4. All three devices have common input/output ports.The
P4C168 enters the standby mode when the chip enable
(CE) control goes HIGH; with CMOS input levels, power
consumption is only 83mW in this mode. Both the P4C169
and the P4C170 offer a fast chip select access time that
is only 67% of the address access time. In addition, the
P4C170 includes an output enable (OE) control to elimi-
nate data bus contention. The RAMs operate from a
single 5V ± 10% tolerance power supply.
FUNCTIONAL BLOCK DIAGRAM
Fully TTL Compatible, Common I/O Ports
Three Options
– P4C168 Low Power Standby Mode
– P4C169 Fast Chip Select Control
– P4C170 Fast Chip Select, Output Enable
Controls
Standard Pinout (JEDEC Approved)
– P4C168: 20-pin DIP, SOJ, LCC, SOIC,
CERPACK, and Flat Pack
– P4C169: 20-pin DIP and SOIC
– P4C170: 22-pin DIP
Access times as fast as 12 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is used to reduce power consumption to a low 715
mW active, 193 mW standby.
The P4C168 and P4C169 are available in 20-pin (P4C170
in 22-pin) 300 mil DIP packages providing excellent
board level densities. The P4C168 is also available in 20-
pin 300 mil SOIC, SOJ, CERPACK, and Flat Pack
packages.
The P4C169 is also available in a 20-pin 300 mil SOIC
package.
PIN CONFIGURATIONS
P4C168
P4C169
DIP (P2, C6, D2) DIP (P2)
SOIC (S2)
SOIC (S2)
SOJ (J2)
CERPACK (F2)
SOLDER SEAL FLAT PACK (FS-2)
P4C170
DIP (P3)
Document # SRAM107 REV A
1 Revised October 2005

1 page

P4C170 pdf
P4C168, P4C169, P4C170
AC ELECTRICAL CHARACTERISTICS - WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym
Parameter
-12 -15 -20 -25 -35
Min Max Min Max Min Max Min Max Min Max
tWC Write Cycle Time
12 15 18 20 30
tcw Chip Enable Time to End of Write
12 15 18 20 30
tAW Address Valid to End of Write
12 15 18 20 30
tAS Address Set-up Time
00000
tWP Write Pulse Width
12 15 18 20 30
tAH Address Hold Time
00000
tDW
www.DataSheett4DUH.com
Data Valid to End of Write
Data Hold Time
7 8 10 10 15
00000
tWZ Write Enable to Output in High Z
4 5 6 7 13
tOW Output Active from End of Write
00000
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AC ELECTRICAL CHARACTERISTICS - WRITE CYCLE (CONTINUED)
(VCC = 5V ± 10%, All Temperature Ranges)(2)
Sym
Parameter
-45 -55 -70
Min Max Min Max Min Max
Unit
tWC Write Cycle Time
45 55 70
ns
tcw Chip Enable Time to End of Write
40 50 60
ns
tAW Address Valid to End of Write
40 50 60
ns
tAS Address Set-up Time
000
ns
tWP Write Pulse Width
40 50 60
ns
tAH Address Hold Time
000
ns
tDW Data Valid to End of Write
20 20 25
ns
tDH Data Hold Time
333
ns
tWZ Write Enable to Output in High Z
20 25 30 ns
tOW Output Active from End of Write
000
ns
Document # SRAM107 REV A
Page 5 of 15

5 Page

P4C170 arduino
Pkg #
# Pins
Symbol
A
b
b1
c
c1
D
E
E1
E2
E3
e
www.DataSheet4U.cokm
L
Q
S1
M
N
FS-2
20
Min Max
0.045 0.115
0.015 0.022
0.015 0.019
0.004 0.009
0.004 0.006
- 0.540
0.245 0.300
- 0.330
0.130
-
0.030
-
0.050 BSC
0.008 0.015
0.250 0.370
0.026 0.045
0.000
-
- 0.0015
20
SOLDER SEAL FLAT PACKAGE
P4C168, P4C169, P4C170
Pkg #
# Pins
Symbol
A
A1
b
C
D
e
E
E1
E2
Q
J2
20 (300 mil)
Min Max
0.120 0.140
0.080
-
0.014 0.020
0.008 0.013
0.496 0.512
0.050 BSC
0.335 0.347
0.292 0.300
0.267 BSC
0.025
-
SOJ SMALL OUTLINE IC PACKAGE
Document # SRAM107 REV A
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