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PDF BAV18 Data sheet ( Hoja de datos )
| Número de pieza | BAV18 | |
| Descripción | (BAVxx) SMALL SIGNAL SWITCHING DIODE | |
| Fabricantes | Galaxy Semi-Conductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BAV18 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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BL GALAXY ELECTRICAL
SMALL SIGNAL SWITCHING DIODE
BAV17---BAV21
VOLTAGE RANGE: 20-200 V
CURRENT: 250 mA
FEATURES
Silicon epitaxial planar diode
High speed switching diode
500 m W power dissipation
DO - 35(GLASS)
www.DataSheet4U.com
MECHANICAL DATA
Case: DO-35,glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 gram s
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
am bient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
BAV17
BAV18
VR 20
50
VRM
25
60
Half w ave rectification w ith resist.load
I(AV)
@TA=25 and f 50Hz
Forw ard surge current @ t<1s and TJ=25
IFSM
Pow er dissipation
@ TA=25
Ptot
Thermal resistance junction to ambient
RθJA
Junction temperature
TJ
Storage temperature range
TSTG
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
BAV19
100
120
2501)
1.0
5001)
350
175
-55 --- +175
ELECTRICAL CHARACTERISTICS
Forw ard voltage @ IF=100mA
VF
MIN
-
TYP
-
Leakage current
at reverse voltage
@Tj=25
@Tj=100
-
IR
-
Capacitance @ VF=VR=0V f=1MHZ
Reverse recovery time
CJ
-
from IF=30mA to IR=30mA
from IRR=3mA, RL=100Ω.
trr -
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
-
-
1.5
-
BAV20
150
200
BAV21
200
250
UNITS
V
V
mA
A
mW
K/W
MAX
1.0
100
15
-
50
UNITS
V
nA
µA
pF
ns
www.galaxycn.com
Document Number 0268008
BLGALAXY ELECTRICAL
1.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BAV18.PDF ] | |
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