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PDF L2SC3356LT1 Data sheet ( Hoja de datos )
| Número de pieza | L2SC3356LT1 | |
| Descripción | High-Frequency Amplifier Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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DATA SHEET
LESHAN RADIO COMPANY, LTD.
L2SC3356LT1
3
DESCRIPTION
www.DataSheet4U.com The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
1
2
SOT-23
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
20
Collector to Emitter Voltage VCEO
12
Emitter to Base Voltage
VEBO
3.0
Collector Current
IC 100
Total Power Dissipation
PT
200
Junction Temperature
Tj
150
Storage Temperature
Tstg 65 to +150
V
V
V
mA
mW
C
C
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0 A VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0 A VEB = 1.0 V, IC = 0
DC Current Gain
hFE 82 170 270
VCE = 10 V, IC = 20 mA
Gain Bandwidth Product
fT
7 GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance
Cre**
0.55 1.0
pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain
S21e2
11.5
dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF 1.1 2.0 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* Pulse Measurement PW 350 s, Duty Cycle 2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
Driver Marking
L2SC3356LT1=R24
L2SC3356LT1-1/4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet L2SC3356LT1.PDF ] | |
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