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PDF 2SB1672 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1672 | |
| Descripción | Power Transistor | |
| Fabricantes | ROHM Semiconductor | |
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Transistors
Power Transistor (−80V, −7A)
2SB1672
2SB1672
!Features
1) Low saturation voltage.
www.DataSheet4U.com (Typ. VCE(sat) = −0.3V at IC / IB =−4A / −0.4A)
2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25°C).
4) Wide SOA (safe operating area).
5) Complements the 2SD2611.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* Single pulse, Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−80
−80
−5
−7
−10
2
30
150
−55 ∼ +150
Unit
V
V
V
A(DC)
A(Pulse) *
W
W(Tc=25°C)
°C
°C
!External dimensions (Units : mm)
10.0
φ 3.2
4.5
2.8
1.2 1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
ROHM : TO-220FN
0.75 2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SB1672
TO-220FN
EF
−
500
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
−80
−80
−5
−
−
−
−
100
−
−
Typ.
−
−
−
−
−
−
−
−
12
200
Max.
−
−
−
−10
−10
−1
−1.5
320
−
−
Unit
V
V
V
µA
µA
V
V
−
MHz
pF
Conditions
IC = −50µA
IC = −1mA
IE = −50µA
VCB = −80V
VEB = −4V
IC/IB = −4A/−0.4A
IC/IB = −4A/−0.4A
VCE/IC = −5V/−1A
VCE = −5V , IE = 0.5A , f = 5MHz
VCB = −10V , IE = 0A , f = 1MHz
∗
∗
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| PDF Descargar | [ Datasheet 2SB1672.PDF ] | |
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