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PDF L2N7002LT1 Data sheet ( Hoja de datos )
| Número de pieza | L2N7002LT1 | |
| Descripción | Small Signal MOSFET | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23
• Pb−Free Package is Available.
www.DataSheet4U.cMomAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Drain Current
– Continuous TC = 25°C (Note 1.)
– Continuous TC = 100°C (Note 1.)
– Pulsed (Note 2.)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp ≤ 50 µs)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(Note 4.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VDSS
VDGR
ID
ID
IDM
Value
60
60
±ā115
±ā75
±ā800
Unit
Vdc
Vdc
mAdc
VGS
VGSM
±ā20 Vdc
±ā40 Vpk
Symbol
PD
Max
225
1.8
Unit
mW
mW/°C
RθJA
PD
RθJA
TJ, Tstg
556
300
2.4
417
–ā55 to
+150
°C/W
mW
mW/°C
°C/W
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
L2N7002LT1
3
1
2
CASE 318, STYLE 21
SOT– 23 (TO–236AB)
115 mAMPS
60 VOLTS
R DS(on) = 7.5 W
N - Channel
3
1
2
MARKING DIAGRAM
& PIN ASSIGNMENT
Drain
3
702
W
12
Gate Source
702 = Device Code
W = Work Week
ORDERING INFORMATION
Device
Marking
Shipping
L2N7002LT1
702 3000 Tape & Reel
L2N7002LT1G 702(Pb-Free) 3000 Tape & Reel
L2N7002LT1–1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet L2N7002LT1.PDF ] | |
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