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PDF 5SHY42L6530 Data sheet ( Hoja de datos )
| Número de pieza | 5SHY42L6530 | |
| Descripción | Asymmetric Integrated Gate- Commutated Thyristor | |
| Fabricantes | ABB | |
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VDRM =
ITGQM =
ITSM =
V(T0) =
rT =
VDC-link =
6500 V
4200 A
26×103 A
2.0 V
0.54 mΩ
4000 V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 42L6530
PRELIMINARY
• High snubberless turn-off rating
• Wide temperature range
www.DataShee•t4UH.coimgh electromagnetic immunity
• Simple control interface with status feedback
• AC or DC supply voltage
• Option for series connection (contact factory)
Doc. No. 5SYA1246-00 Aug. 07
Blocking
Maximum rated values 1)
Parameter
Rep. peak off-state voltage
Symbol
VDRM
Conditions
Gate Unit energized, Note 1
Permanent DC voltage for VDC-link Ambient cosmic radiation at sea level
100 FIT failure rate of GCT
in open air. Gate Unit energized
Reverse voltage
Characteristic values
Parameter
VRRM
Symbol Conditions
Rep. peak off-state current IDRM
VD = VDRM, Gate Unit energized
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below -25 °C
min
min
typ
typ
Mechanical data (see Fig. 11, 12)
Maximum rated values 1)
Parameter
Symbol Conditions
min
Mounting force
Characteristic values
Parameter
Fm
Symbol Conditions
36
min
Pole-piece diameter
Dp ± 0.1 mm
Housing thickness
H
25.3
Weight
m
Surface creepage distance Ds
Anode to Gate
33
Air strike distance
Da Anode to Gate
10
Length
l ± 1.0 mm
Height
h ± 1.0 mm
Width IGCT
w ± 1.0 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
typ
40
typ
85
439
40
173
max
6500
4000
Unit
V
V
17 V
max
50
Unit
mA
max
44
Unit
kN
max
25.8
2.9
Unit
mm
mm
kg
mm
mm
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
1 page  
5SHY 42L6530
Max. on-state characteristic model:
VT25 = ATvj + BTvj ⋅IT +CTvj ⋅ln(IT +1) + DTvj ⋅ IT
Valid for iT = 300 – 30000 A
A25
Max. -220.9×10-3
B25
279.5×10-6
C25
322.7×10-3
D25
-483.3×10-18
Typ. -204.8×10-3
259.1×10-6
299.1×10-3
407.0×10-18
Max. on-state characteristic model:
VT125 = ATvj + BTvj ⋅IT +CTvj ⋅ln(IT +1) + DTvj ⋅ IT
Valid for iT = 300 – 30000 A
A125
Max. -281.3×10-3
B125
394.6×10-6
C125
338.2×10-3
D125
822.5×10-18
Typ. -260.7×10-3 365.8×10-6 313.4×10-3 500.3×10-18
www.DataSheet4U.com
Fig. 3 GCT on-state voltage characteristics
Fig. 4 GCT on-state voltage characteristics
Fig. 5 Surge on-state current vs. pulse length, half-
sine wave
Fig. 6 Surge on-state current vs. number of pulses,
half-sine wave, 10 ms, 50 Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1246-00 Aug. 07
page 5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 5SHY42L6530.PDF ] | |
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