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Número de pieza | 5SHY35L4511 | |
Descripción | Asymmetric Integrated Gate- Commutated Thyristor | |
Fabricantes | ABB | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 5SHY35L4511 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! VDRM =
ITGQM =
ITSM =
V(T0) =
rT =
VDC-link =
4500 V
3800 A
28×103 A
1.7 V
0.457 mΩ
2800 V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 35L4511
• High snubberless turn-off rating
• Optimized for medium frequency (<1 kHz) and
low turn-off losses
www.DataSheet4U.com
• High reliability
• High electromagnetic immunity
• Simple control interface with status feedback
• AC or DC supply voltage
• Contact factory for series connection
Doc. No. 5SYA1234-02 June 07
Blocking
Maximum rated values 1)
Parameter
Rep. peak off-state voltage
Permanent DC voltage for
100 FIT failure rate of GCT
Symbol
VDRM
VDC-link
Conditions
Gate Unit energized
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
min
Reverse voltage
Characteristic values
Parameter
Rep. peak off-state current
VRRM
Symbol
IDRM
IGCT in
off-state
on-state
Conditions
VD = VDRM, Gate Unit energized
min
Mechanical data (see Fig. 11, 12)
Maximum rated values 1)
Parameter
Symbol Conditions
Mounting force
Characteristic values
Parameter
Fm
Symbol Conditions
Pole-piece diameter
Dp ± 0.1 mm
Housing thickness
H
min
36
min
25.3
Weight
m
Surface creepage distance
Air strike distance
Length
Ds
Da
l
Anode to Gate
Anode to Gate
± 1.0 mm
33
10
Height
h ± 1.0 mm
Width IGCT
w ± 1.0 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
typ
typ
typ
40
typ
85
439
40
173
max
4500
2800
Unit
V
V
17 V
10 V
max
50
Unit
mA
max
44
Unit
kN
max
25.8
2.9
Unit
mm
mm
kg
mm
mm
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
1 page Max. on-state characteristic model:
VT25 = ATvj + BTvj ⋅IT +CTvj ⋅ln(IT +1) + DTvj ⋅ IT
Valid for iT = 300 – 30000 A
A25 B25 C25
697.2×10-3 242.8×10-6 183.2×10-3
D25
0.0
5SHY 35L4511
Max. on-state characteristic model:
VT125 = ATvj + BTvj ⋅IT +CTvj ⋅ln(IT +1) + DTvj ⋅ IT
Valid for iT = 300 – 30000 A
A125
B125
-103.9×10-3 354.0×10-6
C125
263.9×10-3
D125
0.0
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Fig. 3 GCT on-state voltage characteristics
Fig. 4 GCT on-state voltage characteristics
Fig. 5 Surge on-state current vs. pulse length, half-
sine wave
Fig. 6 Surge on-state current vs. number of pulses,
half-sine wave, 10 ms, 50Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1234-02 June 07
page 5 of 9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 5SHY35L4511.PDF ] |
Número de pieza | Descripción | Fabricantes |
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