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PDF 5SHY35L4510 Data sheet ( Hoja de datos )

Número de pieza 5SHY35L4510
Descripción Asymmetric Integrated Gate- Commutated Thyristor
Fabricantes ABB 
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No Preview Available ! 5SHY35L4510 Hoja de datos, Descripción, Manual

VDRM =
ITGQM =
ITSM =
V(T0) =
rT =
VDC-link =
4500 V
4000 A
32×103 A
1.4 V
0.325 m
2800 V
Asymmetric Integrated Gate-
Commutated Thyristor
5SHY 35L4510
High snubberless turn-off rating
Optimized for medium frequency (<1 kHz) and
wide temperature range
www.DataSheet4U.com
High reliability
High electromagnetic immunity
Simple control interface with status feedback
AC or DC supply voltage
Contact factory for series connection
Doc. No. 5SYA1232-02 June 07
Blocking
Maximum rated values 1)
Parameter
Rep. peak off-state voltage
Permanent DC voltage for
100 FIT failure rate of GCT
Symbol
VDRM
VDC-link
Conditions
Gate Unit energized
Ambient cosmic radiation at sea level
in open air. Gate Unit energized
min
Reverse voltage
Characteristic values
Parameter
Rep. peak off-state current
VRRM
Symbol
IDRM
IGCT in
off-state
on-state
Conditions
VD = VDRM, Gate Unit energized
min
Mechanical data (see Fig. 11, 12)
Maximum rated values 1)
Parameter
Symbol Conditions
Mounting force
Characteristic values
Parameter
Fm
Symbol Conditions
Pole-piece diameter
Dp ± 0.1 mm
Housing thickness
H
min
36
min
25.3
Weight
m
Surface creepage distance
Air strike distance
Length
Ds
Da
l
Anode to Gate
Anode to Gate
± 1.0 mm
33
10
Height
h ± 1.0 mm
Width IGCT
w ± 1.0 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
typ
typ
typ
40
typ
85
439
40
173
max
4500
2800
Unit
V
V
17 V
10 V
max
50
Unit
mA
max
44
Unit
kN
max
25.8
2.9
Unit
mm
mm
kg
mm
mm
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

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5SHY35L4510 pdf
Max. on-state characteristic model:
VT25 = ATvj + BTvj IT +CTvj ln(IT +1) + DTvj IT
Valid for iT = 300 – 30000 A
A25 B25 C25
622.7×10-3 163.4×10-6 141.1×10-3
D25
0.0
5SHY 35L4510
Max. on-state characteristic model:
VT125 = ATvj + BTvj IT +CTvj ln(IT +1) + DTvj IT
Valid for iT = 300 – 30000 A
A125
-16.0×10-3
B125
226.6×10-6
C125
218.4×10-3
D125
0.0
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Fig. 3 GCT on-state voltage characteristics
Fig. 4 GCT on-state voltage characteristics
Fig. 5 Surge on-state current vs. pulse length, half-
sine wave
Fig. 6 Surge on-state current vs. number of pulses,
half-sine wave, 10 ms, 50Hz
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1232-02 June 07
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