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PDF FMM5057X Data sheet ( Hoja de datos )
| Número de pieza | FMM5057X | |
| Descripción | Power Amplifier MMIC | |
| Fabricantes | Eudyna Devices | |
| Logotipo |  |
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FEATURES
•High Output Power; P1dB = 34 dBm (Typ.)
•High Linear Gain; GL = 27 dB(Typ.)
•Frequency Band ; 7.1 - 8.5 GHz
•High Linearity ; OIP3 = 42.5 dBm(typ.)
•Impedance Matched Zin/Zout = 50Ω
www.DataSheet4U.com DESCRIPTION
The FMM5057X is a power amplifier MMIC that contains a four
stage amplifier, internally matched, for standard communications
band in 7.1 to 8.5GHz frequency range. This product is well
suited for point-to-point radio applications.
FMM5057X
C-Band Power Amplifier MMIC
Eudyna’s stringent Quality Assurance Program assures the
highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING
Item
Drain-Source Voltage
Gate-Source Voltage
Input Power
Strage Temperature
Symbol
VDD
VGG
Pin
Tstg
Rating
12
-3
14
-55 to +125
Unit
V
V
dBm
℃
RECOMMENDED OPERATING CONDITIONS
Item Symbol
Drain-Source Voltage
VDD
Input Power
Pin
Drain Current without RF
IDD(DC)
Operating Backside Temperature
Top
This Product should be hermetically packaged.
Condition
≦10
12
≦1200
-40 to +85
Unit
V
dBm
mA
℃
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25℃)
Item
Symbol
Test Conditions
Frequency Range
f VDD=10.0V
Output Power at 1dB G.C.P.
P1dB IDD(DC)=1200mA typ.
Power Gain at 1dB G.C.P.
G1dB Zs=Zl=50ohm
Gain Flatness
ΔG
Input Return Loss
RLin
Output Return Loss
RLout
Note : RF parameter sample size 10ps. Criteria (accept/reject)=(0/1)
Limits
Min. Typ. Max.
Unit
7.1 - 8.5 GHz
32.0 34.0 -
dBm
23 26
-
dB
- +/- 1.2 +/-2.0 dB
7.0 10
-
dB
- 10 -
dB
G.C.P. : Gain Compression Point
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ)
Class 0
~ 199V
Edition 1.1
January 2006
1
http://www.eudyna.com/
1 page  
Output Power, Drain Current
vs. Input Power by Drain Current
www.DataSheet4U.com
VDD=10V, f=7.1GHz
36
800m A
34
1200m A
1600m A
32
30
Pout
2300
2100
1900
1700
28 1500
26 1300
24 1100
22
20
-4
-2
0
Drain Current
2 4 6 8 10 12 14
Input Pow er [dBm ]
900
700
16
Output Power, Drain Current
vs. Input Power by Drain Current
VDD=10V, f=8.5GHz
36
800m A
34
1200m A
1600m A
32
30
Pout
2300
2100
1900
1700
28 1500
26 1300
24 1100
22 900
Drain Current
20 700
-4 -2 0 2 4 6 8 10 12 14 16
Input Pow er [dBm ]
FMM5057X
C-Band Power Amplifier MMIC
Output Power, Drain Current
vs. Input Power by Drain Current
VDD=10V, f=7.7GHz
36
800m A
34
1200m A
1600m A
32
30
Pout
2300
2100
1900
1700
28 1500
26 1300
24 1100
22 900
Drain Current
20 700
-4 -2 0 2 4 6 8 10 12 14 16
Input Pow er [dBm ]
Output Power, Gain vs. Drain Current
VDD=10V
36
7.1GHz
34
7.7GHz
8.5GHz
32
P1dB
36
34
32
30 30
28 28
G1dB
26 26
24 24
22 22
400 600 800 1000 1200 1400 1600 1800
Drain Current [mA]
5
5 Page 
FMM5057X
C-Band Power Amplifier MMIC
■ Chip Outline and Bonding Pad Locations (Dimension in Micro-Meters)
www.DataSheet4U.com
0
3230
3105
3075
VGG
737 1204
VDD3
2000
VDD5
3545
4130
3230
3105
3075
RF-IN 1618
1618 RF-OUT
128
0
0
737 1204
VDD1 VDD2
2000
VDD4
128
0
3545
VDD6
4130
Chip Size : 4130±30um x 3230±30um
Chip Thickness : 70±20um
Bonding Pad Size :
RF-Pad : 120um x 240um
VDD Pad : 240um x 120um
VGG Pad : 120um x 120um
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet FMM5057X.PDF ] | |
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