No Preview Available !
STW34NB20
N-CHANNEL 200V - 0.062 Ω - 34A TO-247
PowerMESH™ MOSFET
Table 1. General Features
Type
www.DataSheet4U.com
STW34NB20
VDSS
200 V
RDS(on)
< 0.075 Ω
ID
34 A
Figure 1. Package
FEATURES SUMMARY
■ TYPICAL RDS(on) = 0.062 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and dv/dt
capabilities and unrivalled gate charge and switch-
ing characteristics.
APPLICATIONS
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
■ HIGH CURRENT, HIGH SPEED SWITCHING
3
2
1
TO-247
Figure 2. Internal Schematic Diagram
Table 2. Order Codes
Part Number
STW34NB20
Marking
W34NB20
Package
TO-247
Packaging
TUBE
April 2004
REV. 2
1/10
Figure 7. Transconductance
STW34NB20
Figure 8. Static Drain-source On Resistance
www.DataSheet4U.com
Figure 9. Gate Charge vs Gate-source Voltage Figure 10. Capacitance Variations
Figure 11. Normalized Gate Thresold Voltage
vs Temperature
Figure 12. Normalized On Resistance vs
Temperature
5/10