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PDF B644 Data sheet ( Hoja de datos )
| Número de pieza | B644 | |
| Descripción | PNP Transistor - 2SB644 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de B644 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Transistor
2SB643, 2SB644
Silicon PNP epitaxial planer type
For low-power general amplification
Complementary to 2SD638 and 2SD639
s Features
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
www.DataSheet4U.com
Parameter
Symbol
Ratings
Collector to
base voltage
2SB643
2SB644
VCBO
–30
–60
Collector to 2SB643
emitter voltage 2SB644
VCEO
–25
–50
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
ICP
IC
PC
Tj
Tstg
–7
–1
– 0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base
voltage
2SB643
2SB644
ICBO
ICEO
VCBO
Collector to emitter
voltage
2SB643
2SB644
VCEO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VEBO
hFE1*1
hFE2
VCE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA*2
VCE = –10V, IC = –500mA*2
IC = –300mA, IB = –30mA*2
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S
170 ~ 340
min typ max Unit
–100 nA
–1 µA
–30
V
–60
–25
V
–50
–7 V
85 340
40 90
– 0.35 – 0.6
V
200 MHz
6 15 pF
*2 Pulse measurement
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet B644.PDF ] | |
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