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PDF 2N5643 Data sheet ( Hoja de datos )
| Número de pieza | 2N5643 | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | ASI | |
| Logotipo |  |
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2N5643
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N5643 is Designed for
wideband large-signal amplifier stages
in the 125 – 175 MHz range.
FEATURES:
• Minimum Gain = 7.6 dB
• Output Power = 40 W
www.Da•taOSmhneiegt4oUld.™comMetalization System
MAXIMUM RATINGS
IC 5.0 A
VCBO
65 V
VCEO
35 V
VEBO
4.0 V
PDISS
60 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC 2.9 °C/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
C
B
EE
ØC B
D
#8-32 UNC-2A
DIM
A
B
C
D
E
F
G
H
I
J
M IN IM U M
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
E
HI
J
G
F
M A X IM U M
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 200 mA
BVCES
IC = 200 mA
BVEBO
IE = 10 mA
ICBO
VCB = 30 V
hFE VCE = 5.0 V
IC = 500 mA
COB
VCB = 30 V
f = 1.0 MHz
GP VCE = 28 V
ηC VCE = 10 V
POUT = 40 W
IC = 200 mA
f = 175 MHz
f = 100 MHz
MINIMUM TYPICAL MAXIMUM
35
65
4.0
1.0
5.0 ---
UNITS
V
V
V
mA
---
45 65 pF
7.6 8.1 --- dB
60 %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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| PDF Descargar | [ Datasheet 2N5643.PDF ] | |
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