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PDF CHA2411-QDG Data sheet ( Hoja de datos )

Número de pieza CHA2411-QDG
Descripción GaAs Monolithic Microwave IC
Fabricantes United Monolithic Semiconductors 
Logotipo United Monolithic Semiconductors Logotipo



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No Preview Available ! CHA2411-QDG Hoja de datos, Descripción, Manual

CHA2411-QDG
RoHS COMPLIANT
20-25GHz LNA
GaAs Monolithic Microwave IC
In QFN package
www.DataSheet4U.comDescription
The CHA2411 is a monolithic Low
noise Amplifier in K band providing 26 dB gain
from a single bias supply +5V with a noise
figure of 2.5 dB. All the active devices are self
biased on chip.
The circuit is manufactured with a
standard GaAs PHEMT process: 0.25µm gate
length, via holes through the substrate, air
bridges and electron beam gate lithography.
The chip is delivered in a 24 Leads
RoHS compliant QFN4x4 package.
Main Features
n Excellent noise figure : 2.5 dB
n Stable gain vs temperature 26 ± 2dB
n Single supply : +5V
n Devices self biased on chip
n Standard SMD package : QFN 24L 4x4
Functional diagram
Plastic Package
Main Characteristics in QFN package
Tamb = +25°C
Parameters
Frequency range
Small signal Gain
SSB Noise figure
Input / Output Return Loss
Min Typ Max Unit
20 25 GHz
22 26 30 dB
2.5 dB
15 dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA2411QDG6174 - 23 Jun 06
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

1 page




CHA2411-QDG pdf
K-band LNA
QFN Outline
www.DataSheet4U.com
CHA2411-QDG
Ref. : DSCHA2411QDG6174 - 23 Jun 06
5/10
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice

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