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Número de pieza | GFD50N03A | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | General Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GFD50N03A (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! GFD50N03A
N-Channel Enhancement-Mode MOSFET
T FREENNCHET®
G TO-252 (DPAK)
0.265 (6.73)
0.255 (6.48)
0.214 (5.44)
www.DataSheet4U.co0m.206D(5.23)
0.094 (2.39)
0.087 (2.21)
0.050 (1.27)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
VDS 30V RDS(ON) 7mΩ
D
New Product G
S
0.190
(4.826)
ID 78A
0.170 (4.32) min.
0.245 (6.22)
0.235 (5.97)
0.410 (10.41)
0.060 (1.52)
0.380 (9.65)
GS
0.045 (1.14)
0.197 (5.00)
0.177 (4.49)
0.165
(4.191)
0.100
(2.54)
0.035 (0.89)
0.028 (0.71)
0.204 (5.18)
0.156 (3.96)
0.040 (1.02)
0.025 (0.64)
0.023 (0.58)
0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
0.020 (0.51)
min.
0.009 (0.23)
0.001 (0.03)
Mechanical Data
Case: JEDEC TO-252 molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Weight: 0.011oz., 0.4g
0.118
(3.0)
Dimensions in inches
and (millimeters)
0.243
(6.172)
0.063
(1.6)
Mounting Pad Layout
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
Continuous Drain Current(1)
VGS
± 20
ID 78
Pulsed Drain Current
IDM 180
Maximum Power Dissipation
TC = 25°C
TC = 70°C
PD
70
45
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(2)
RθJC
RθJA
1.8
40
Notes: (1) Maximum DC current limited by the package
(2) 1-in2 2oz. Cu PCB mounted
Unit
V
A
W
°C
°C/W
°C/W
5/1/01
1 page GFD50N03A
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 10 – Breakdown Voltage
vs. Junction Temperature
43
42 ID = 250µA
41
www.DataSheet4U.co4m0
39
38
37
36
--50 --25 0 25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 11 – Transient Thermal
Impedance
Fig. 12 – Power vs. Pulse Duration
1000
Fig. 13 – Maximum Safe Operating Area
1000
800
600
400
200
0
0.0001 0.001
0.01
0.1
1
10
100 100µs
10ms1ms
10 RDS(ON) Limit
VGS = 10V
Single Pulse
RθJC = 1.8°C/W
TA = 25°C
1
0.1 1
DC
10
VDS -- Drain-Source Voltage (V)
100
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet GFD50N03A.PDF ] |
Número de pieza | Descripción | Fabricantes |
GFD50N03 | N-Channel Enhancement Mode MOSFET | General Semiconductor |
GFD50N03A | N-Channel Enhancement Mode MOSFET | General Semiconductor |
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