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PDF DMD5012-A Data sheet ( Hoja de datos )
| Número de pieza | DMD5012-A | |
| Descripción | IMPROVED PERFORMANCE GOLD METALLISED SILICON DMOS RF FET | |
| Fabricantes | Seme LAB | |
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Hay una vista previa y un enlace de descarga de DMD5012-A (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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TetraFET
DMD5012
DMD5012-A
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
C
(2 pls)
www.DataSheet4U.com
HD
1
B
2
5
3
4
E
(4 pls)
F
I
G
(typ)
P
(2 pls) A
PIN 1
PIN 3
PIN 5
NM
O
D1
SOURCE (COMMON)
DRAIN 2
GATE 1
JK
PIN 2
PIN 4
DRAIN 1
GATE 2
DIM Millimetres
A 15.24
B 10.80
C 45°
D 9.78
E 8.38
F 27.94
G 1.52R
H 10.16
I 21.84
J 0.10
K 1.96
M 1.02
N 4.45
O 34.04
P 1.63R
Tol.
0.50
0.13
5°
0.13
0.13
0.13
0.13
0.15
0.23
0.02
0.13
0.13
0.38
0.13
0.13
Inches
0.600
0.425
45°
0.385
0.330
1.100
0.060R
0.400
0.860
0.004
0.077
0.040
0.175
1.340
0.064R
Tol.
0.020
0.005
5°
0.005
0.005
0.005
0.005
0.006
0.009
0.001
0.005
0.005
0.015
0.005
0.005
IMPROVED PERFORMANCE
GOLD METALLISED
SILICON DMOS RF FET
100W – 50V – 500MHz
PUSH–PULL
FEATURES
• SUITABLE FOR BROAD BAND APPLICATIONS
• SIMPLE BIAS CIRCUITS
• ULTRA-LOW THERMAL RESISTANCE
• BeO FREE
• LOW Crss
• HIGH GAIN – 15 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 500 MHz
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
* Per Side
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
500W (290W -A Version)
125V
±20V
9A
–65 to 150°C
200°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 6470
Issue 3
1 page  
DMD5012
DMD5012-A
www.DataSheet4U.com Gate-Bias
1K 100nF
+50V
100uF
1k
15
100nF
L2
1nF
L1
2-18pF
T1 620pF
22K
T2
T3
8 x 3mm
contact
pad
DMD5012
8 x 3 mm
contact pad
15pF
1-14pF
1-14pF
20pF
620pF
8 x 3mm
contact
pad
DMD5012
8 x 3 mm
contact pad
T4
T5
620pF
T6 1-10pF
620pF
DMD5012 500MHz TEST FIXTURE
T1,6 65mm
T2,3,4,5 75mm
L1 6 turns
L2 8.5 turns
50 Ohm UT85 semi-rigid coax
15 Ohm UT85-15 semi-rigid coax
21 swg enamelled copper wire, 3mm i.d.
19 swg enamelled copper wire on Fair-Rite FT82-43 core
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 6470
Issue 3
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DMD5012-A.PDF ] | |
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