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PDF FW343 Data sheet ( Hoja de datos )
| Número de pieza | FW343 | |
| Descripción | General-Purpose Switching Device | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number : ENN7555
FW343
N-Channel and P-Channel Silicon MOSFETs
FW343
Motor Driver Applications
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• Composite type with an N-channel MOSFET and a P-
www.DataSheet4U.cocmhannel MOSFET driving from a 4V supply voltage
contained in a single package.
• High-density mounting.
Package Dimensions
unit : mm
2129
[FW343]
85
Specifications
Absolute Maximum Ratings at Ta=25°C
1
5.0
4
0.595 1.27 0.43
1 : Source1
2 : Gate1
0.2
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
VDSS
VGSS
ID
ID
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
duty cycle≤1%
duty cycle≤1%
duty cycle≤1%
Mounted on a ceramic board (2000mm2!0.8mm)1unit, PW≤10s
Mounted on a ceramic board (2000mm2!0.8mm),PW≤10s
Ratings
N-channel P-channel
30 --30
±20 ±20
5 --4
5.5 --4.5
7 --6.5
20 --16
1.8
2.2
150
--55 to +150
Unit
V
V
A
A
A
A
W
W
°C
°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Marking : W343
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
1.2 2.6 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1003 TS IM TA-100619 No.7555-1/6
1 page  
FW343
SW Time -- ID
[Pch]
Ciss, Coss, Crss -- VDS [Pch]
3 1000
VDD= --15V
f=1MHz
2
VGS= --10V
7
Ciss
5
100
7
5 td(off)
3 tf
2
10
www.DataSheet4U.com--0.1
23
--10
VDS= --10V
ID= --4A
tr td(on)
5 7 --1.0
23
Drain Current, ID -- A
VGS -- Qg
--8
5 7 --10
IT04973
[Pch]
--6
--4
--2
0
0 2 4 6 8 10 12
Total Gate Charge, Qg -- nC
IT04975
PD -- Ta
2.5
3
2
Coss
100
Crss
7
5
3
0 --5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT04974
ASO
[Pch]
3
2 IDP= --16A
<10µs
--10
7
5
ID= --4A
3
2
10100mmss
100µs
1ms
--1.0
7
5
3
2
DC
10s
operation
Operation in this
--0.1
7
area is limited by RDS(on).
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board(2000mm2!0.8mm) 1unit
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5
Drain-to-Source Voltage, VDS -- V IT04976
2.2
2.0
1.8
1.5
1.0
To1taulndiitssipation
0.5
Mounted on a ceramic board(2000mm2!0.8mm)
0 PW≤10s
0 20 40 60 80 100 120
Ambient Temperature, Ta -- °C
140 160
IT04977
No.7555-5/6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FW343.PDF ] | |
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