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Número de pieza | FW342 | |
Descripción | General-Purpose Switching Device | |
Fabricantes | Sanyo Semicon Device | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FW342 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Ordering number : ENN7912
FW342
FW342
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
www.DataSheet4U• .cFomor motor drives, inverters.
• Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
• High-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Symbol
VDSS
VGSS
ID
ID
ID
IDP
PD
Total Dissipation
Channel Temperature
Storage Temperature
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
duty cycle≤1%
duty cycle≤1%
duty cycle≤1%
Mounted on a ceramic board
(1500mm2!0.8mm)1unit, PW≤10s
Mounted on a ceramic board
(1500mm2!0.8mm), PW≤10s
Parameter
Symbol
Conditions
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : W342
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=10V
ID=3A, VGS=4.5V
ID=3A, VGS=4V
N-channel
30
±20
6
7
10
24
P-channel
--30
±20
--5
--5.5
--9
--20
1.8
Unit
V
V
A
A
A
A
W
2.2
150
--55 to +150
W
°C
°C
Ratings
min typ max
Unit
30 V
1 µA
±10 µA
1.2 2.6 V
4.6 7.8
S
25 33 mΩ
35 49 mΩ
37 52 mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2004 TS IM TA-101197 No.7912-1/6
1 page RDS(on) -- VGS
140
ID= --5A
120
ID= --3A
100
FW342
[Pch]
Ta=25°C
80
60
40
20
0
www.DataSheet4U.com 0
--2 --4 --6 --8 --10 --12
Gate-to-Source Voltage, VGS -- V
yfs -- ID
10
VDS= --10V
7
--14 --16
IT07392
[Pch]
5 Ta= --25°C
3 75°C
2 25°C
1.0
7
5
--0.1
23
3
VDD= --15V
2 VGS= --10V
5 7 --1.0
23
Drain Current, ID -- A
SW Time -- ID
td(off)
100
7
5 tf
3
2 tr
5 7 --10
IT07394
[Pch]
10
7 td(on)
5
3
--0.1
23
--10
VDS= --10V
--9 ID= --5A
--8
5 7 --1.0
23
Drain Current, ID -- A
VGS -- Qg
5 7 --10
IT07396
[Pch]
--7
--6
--5
--4
--3
--2
--1
0
0 2 4 6 8 10 12 14 16 18
Total Gate Charge, Qg -- nC
IT07398
RDS(on) -- Ta
[Pch]
140
120
100
80
60
40
I DIID=D==---3---3A5A,AV, ,VGVGSG=SS=-=--4--4V-1.50VV
20
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT07393
IF -- VSD
[Pch]
--10
7 VGS=0
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
--0.2
3
2
--0.4
--0.6
--0.8
--1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
--1.2
IT07395
[Pch]
f=1MHz
1000
7
5
Ciss
3
2 Coss
100 Crss
7
5
0 --5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT07397
ASO
[Pch]
5
3 IDP= --20A
≤10µs
2
--10
7
ID= --5A
5
100µs
1ms
3
2
--1.0
7
5
3 Operation in this area
2 is limited by RDS(on).
--0.1
10ms
DC
1100s0ms
operation
7
5
3 Ta=25°C
2 Single pulse
--0.01 Mounted on a ceramic board (1500mm2!0.8mm) 1unit
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
5
Drain-to-Source Voltage, VDS -- V IT07399
No.7912-5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet FW342.PDF ] |
Número de pieza | Descripción | Fabricantes |
FW340 | N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device | Sanyo Semicon Device |
FW341 | General-Purpose Switching Device | Sanyo Semicon Device |
FW342 | General-Purpose Switching Device | Sanyo Semicon Device |
FW343 | General-Purpose Switching Device | Sanyo Semicon Device |
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