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PDF KTB1234T Data sheet ( Hoja de datos )
| Número de pieza | KTB1234T | |
| Descripción | EPITAXIAL PLANAR PNP TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
DRIVER APPLICATIONS.
FEATURES
ᴌAF amplifier, solenoid drivers, LED drivers.
ᴌDarlington connection.
ᴌHigh DC current gain.
ᴌVery small-sized package permitting sets to be made
smaller and slimer.
ᴌComplementary to KTD1854T.
www.DataSheet4U.com
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
ICP
PC *
Tj
-80
-50
-10
-200
-400
0.9
150
Storage Temperature Range
Tstg -55ᴕ150
* Package mounted on a ceramic board (600Ὅᴧ0.8Ὂ)
UNIT
V
V
V
mA
W
ᴱ
ᴱ
EQUIVALENT CIRCUIT
COLLECTOR
BASE
KTB1234T
EPITAXIAL PLANAR PNP TRANSISTOR
E
KB
23
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
JJ
1. EMITTER
2. BASE
3. COLLECTOR
TSM
Marking
S YType Name
Lot No.
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
hFE 1
hFE 2
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
TEST CONDITION
VCB=-60V, IE=0
VEB=-8V, IC=0
IC=-10ỌA, IE=0
IC=-1mA, IB=0
IC=-10ỌA, IC=0
VCE=-2V, IC=-10mA
VCE=-2V, IC=-100mA
IC=-100mA, IB=-100ỌA
IC=-100mA, IB=-100ỌA
2001. 10. 23
Revision No : 0
MIN.
-
-
-80
-50
-10
5000
3000
-
-
TYP.
-
-
-
-
-0.9
-1.5
MAX.
-100
-100
-
-
-1.5
-2.0
UNIT
nA
nA
V
V
V
V
V
1/2
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