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PDF 5SDD33L5500 Data sheet ( Hoja de datos )

Número de pieza 5SDD33L5500
Descripción Rectifier Diode
Fabricantes ABB 
Logotipo ABB Logotipo



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No Preview Available ! 5SDD33L5500 Hoja de datos, Descripción, Manual

VRSM =
IF(AV)M =
IF(RMS) =
IFSM =
VF0 =
rF =
5500 V
3480 A
5470 A
46×103 A
0.94 V
0.147 m
Rectifier Diode
5SDD 33L5500
Patented free-floating silicon technology
Very low on-state losses
www.DataSheet4UO.copmtimum power handling capability
Doc. No. 5SYA1168-00 March 05
Blocking
Maximum rated values 1)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Symbol Conditions
VRRM
f = 50 Hz, tp = 10ms, Tj = 0...150°C
VRSM
f = 5 Hz, tp = 10ms, Tj = 0...150°C
Characteristic values
Parameter
Max. (reverse) leakage current
Symbol Conditions
IRRM
VRRM, Tj = 150°C
min
typ
Value
5000
5500
Unit
V
V
max Unit
400 mA
Mechanical data
Maximum rated values 1)
Parameter
Mounting force
Acceleration
Acceleration
Symbol Conditions
FM
a Device unclamped
a Device clamped
min
63
typ
70
max
77
50
100
Unit
kN
m/s2
m/s2
Characteristic values
Parameter
Symbol Conditions
min typ
Weight
m
Housing thickness
Surface creepage distance
H
FM = 70 kN, Ta = 25 °C
26.0
DS 35
Air strike distance
Da
14
1) Maximum rated values indicate limits beyond which damage to the device may occur
max
1.45
26.6
Unit
kg
mm
mm
mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

1 page




5SDD33L5500 pdf
5SDD 33L5500
www.DataSheet4U.com
Fig. 6 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
Fig. 8 Recovery charge vs. decay rate of on-state
current.
Fig. 9 Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1168-00 March 05
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