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PDF M25P32 Data sheet ( Hoja de datos )
| Número de pieza | M25P32 | |
| Descripción | Serial Flash Memory | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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M25P32
32 Mbit, Low Voltage, Serial Flash Memory
With 50MHz SPI Bus Interface
Feature summary
■ 32Mbit of Flash Memory
■ 2.7 to 3.6V Single Supply Voltage
■ SPI Bus Compatible Serial Interface
■ 50MHz Clock Rate (maximum)
■ VPP = 9V for Fast Program/Erase mode
(optional)
■ Page Program (up to 256 Bytes)
– in 1.4ms (typical)
– in 0.8ms (typical with VPP = 9V)
■ Sector Erase (512Kbit)
■ Bulk Erase (32Mbit)
■ Deep Power-down Mode 1µA (typical)
■ Electronic Signatures
– JEDEC Standard Two-Byte Signature
(2016h)
– RES Instruction, One-Byte, Signature
(15h), for backward compatibility
■ More than 100,000 Erase/Program Cycles per
Sector
■ More than 20 Year Data Retention
■ Packages
– ECOPACK® (RoHS compliant)
VDFPN8 (ME)
8x6mm (MLP8)
SO16 (MF)
300 mil width
February 2006
Rev 8
1/48
www.st.com
1
1 page  
M25P32
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
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Figure 10.
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Figure 21.
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Figure 24.
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Figure 26.
Figure 27.
Figure 28.
Figure 29.
Logic Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
VDFPN Connections. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
SO Connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Bus Master and Memory Devices on the SPI Bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
SPI Modes Supported. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Hold Condition Activation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Write Enable (WREN) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Write Disable (WRDI) Instruction Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Read Identification (RDID) Instruction Sequence and Data-Out Sequence . . . . . . . . . . . . 21
Read Status Register (RDSR) Instruction Sequence and Data-Out Sequence . . . . . . . . . 23
Write Status Register (WRSR) Instruction Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Read Data Bytes (READ) Instruction Sequence and Data-Out Sequence. . . . . . . . . . . . . 26
Read Data Bytes at Higher Speed (FAST_READ) Instruction Sequence
and Data-Out Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Page Program (PP) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Sector Erase (SE) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
Bulk Erase (BE) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Deep Power-down (DP) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Release from Deep Power-down and Read Electronic Signature (RES)
Instruction Sequence and Data-Out Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Release from Deep Power-down (RES) Instruction Sequence . . . . . . . . . . . . . . . . . . . . . 34
Power-up Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
AC Measurement I/O Waveform. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Serial Input Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Write Protect Setup and Hold Timing during WRSR when SRWD=1 . . . . . . . . . . . . . . . . . 42
Hold Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Output Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
VPPH timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
VDFPN8 (MLP8) 8-lead Very thin Dual Flat Package No lead, 8x6mm, Package Outline. 44
SO16 wide – 16-lead Plastic Small Outline, 300 mils body width, Package Outline . . . . . 45
5/48
5 Page 
M25P32
4 Operating features
Operating features
4.1 Page Programming
To program one data byte, two instructions are required: Write Enable (WREN), which is one
byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This is
followed by the internal Program cycle (of duration tPP).
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be
programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive
addresses on the same page of memory.
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted Bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few Bytes (see Page Program (PP)
and Table 14: AC Characteristics).
4.2 Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be
applied, the bytes of memory need to have been erased to all 1s (FFh). This can be
achieved either a sector at a time, using the Sector Erase (SE) instruction, or throughout the
entire memory, using the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of
duration tSE or tBE).
The Erase instruction must be preceded by a Write Enable (WREN) instruction.
4.3 Polling During a Write, Program or Erase Cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase
(SE or BE) can be achieved by not waiting for the worst case delay (tW, tPP, tSE, or tBE). The
Write In Progress (WIP) bit is provided in the Status Register so that the application program
can monitor its value, polling it to establish when the previous Write cycle, Program cycle or
Erase cycle is complete.
4.4 Fast Program/Erase mode
The Fast Program/Erase mode is used to speed up programming/erasing. The device
enters the Fast Program/Erase mode during the Page Program, Sector Erase or Bulk Erase
instruction whenever a voltage equal to VPPH is applied to the W/VPP pin.
The use of the Fast Program/Erase mode requires specific operating conditions in addition
to the normal ones (VCC must be within the normal operating range):
● the voltage applied to the W/VPP pin must be equal to VPPH (see Table 10)
● ambient temperature, TA must be 25°C ±10°C,
● the cumulated time during which W/VPP is at VPPH should be less than 80 hours
11/48
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet M25P32.PDF ] | |
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