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PDF NP80N055NHE Data sheet ( Hoja de datos )

Número de pieza NP80N055NHE
Descripción (NP80N055xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055EHE, NP80N055KHE
NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
www.DataSheet4UT.choemse products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP80N055EHE-E1-AY Note1, 2
NP80N055EHE-E2-AY Note1, 2
NP80N055KHE-E1-AY Note1
NP80N055KHE-E2-AY Note1
NP80N055CHE-S12-AZ Note1, 2
NP80N055DHE-S12-AY Note1, 2
NP80N055MHE-S18-AY Note1
NP80N055NHE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A)
Low input capacitance
Ciss = 2400 pF TYP.
Built-in gate protection diode
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14096EJ7V0DS00 (7th edition)
Date Published October 2007 NS
2002, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

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NP80N055NHE pdf
NP80N055EHE, NP80N055KHE, NP80N055CHE, NP80N055DHE, NP80N055MHE, NP80N055NHE
Figure6. FORWARD TRANSFER CHARACTERISTICS
1000 Pulsed
100
10
www.DataSheet4U.com1
TA = 40°C
25°C
75°C
150°C
175°C
0.1
1
VDS = 10 V
234 5 6
VGS - Gate to Source Voltage - V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 VDS =10V
Pulsed
10
TA = 175°C
1 75°C
25°C
25°C
0.1
0.01
0.01
0.1 1
10
ID - Drain Current - A
100
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
30 Pulsed
20
10 VGS = 10 V
0
1 10 100 1000
ID - Drain Current - A
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
160
120
80
40
0
0
VGS =10 V
Pulsed
1 2 34
VDS - Drain to Source Voltage - V
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
40
30
20
10 ID = 40 A
0
0 2 4 6 8 10 12 14 16 18
VGS - Gate to Source Voltage - V
Figure11. GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
VDS = VGS
4.0 ID = 250 μA
3.0
2.0
1.0
0
50 0 50 100 150
Tch - Channel Temperature - °C
Data Sheet D14096EJ7V0DS
5

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