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PDF DS1230Y Data sheet ( Hoja de datos )

Número de pieza DS1230Y
Descripción 256k Nonvolatile SRAM
Fabricantes Dallas 
Logotipo Dallas Logotipo



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No Preview Available ! DS1230Y Hoja de datos, Descripción, Manual

19-5635; Rev 11/10
www.maxim-ic.com
DS1230Y/AB
256k Nonvolatile SRAM
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Replaces 32k x 8 volatile static RAM,
EEPROM or Flash memory
Unlimited write cycles
Low-power CMOS
Read and write access times of 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
Full ±10% VCC operating range (DS1230Y)
Optional ±5% VCC operating range
(DS1230AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
JEDEC standard 28-pin DIP package
PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides
lithium backup battery
- Standardized pinout for all nonvolatile
SRAM products
- Detachment feature on PowerCap allows
easy removal using a regular screwdriver
PIN ASSIGNMENT
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28 VCC
27 WE
26 A13
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE
19 DQ7
18 DQ6
17
DQ5
16 DQ4
15 DQ3
28-Pin Encapsulated Package
740-mil Extended
NC 1
NC 2
NC 3
NC 4
VCC 5
WE 6
OE 7
CE 8
DQ7
9
DQ6
10
DQ5
11
DQ4
12
DQ3
DQ2
13
14
GND VBAT
DQ1
15
DQ0
16
GND
17
34 NC
33 NC
32 A14
31 A13
30 A12
29 A11
28 A10
27 A9
26 A8
25 A7
24 A6
23 A5
22 A4
21 A3
20 A2
19 A1
18 A0
34-Pin PowerCap Module (PCM)
(Uses DS9034PC+ or DS9034PCI+ PowerCap)
PIN DESCRIPTION
A0 - A14
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE - Chip Enable
WE - Write Enable
OE - Output Enable
VCC
GND
- Power (+5V)
- Ground
NC - No Connect
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1 page




DS1230Y pdf
DS1230Y/AB
AC ELECTRICAL CHARACTERISTICS
(VCC = 5V ±5% for DS1230AB)
(TA: See Note 10) (VCC = 5V ±10% for DS1230Y)
DS1230AB-70
PARAMETER
SYMBOL
DS1230Y-70
UNITS NOTES
MIN
MAX
Read Cycle Time
tRC 70
ns
Access Time
tACC
70 ns
OE to Output Valid
tOE
35 ns
CE to Output Valid
tCO
70 ns
OE or CE to Output Active
tCOE
5
ns 5
Output High-Z from
Deselection
tOD
25 ns
5
Output Hold from Address
Change
tOH
5
ns
Write Cycle Time
tWC 70
ns
Write Pulse Width
tWP 55
ns 3
Address Setup Time
tAW 0
ns
Write Recovery Time
tWR1
tWR2
5
15
12
ns
13
Output High-Z from WE
tODW
25 ns
5
Output Active from WE
tOEW
5
ns 5
Data Setup Time
tDS 30
ns 4
Data Hold Time
tDH1 0
tDH2 10
12
ns
13
5 of 10

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