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PDF K192A Data sheet ( Hoja de datos )
| Número de pieza | K192A | |
| Descripción | MOSFET ( Transistor ) - 2SK192A | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK192A
FM Tuner Applications
VHF Band Amplifier Applications
2SK192A
Unit: mm
· High power gain: GPS = 24dB (typ.) (f = 100 MHz)
· Low noise figure: NF = 1.8dB (typ.) (f = 100 MHz)
· High forward transfer admittance: |Yfs| = 7 mS (typ.) (f = 1 kHz)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDO
IG
PD
Tj
Tstg
Rating
-18
10
200
125
-55~125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1D
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
IGSS
VGS = -1.0 V, VDS = 0
V (BR) GDO IG = -100 mA
IDSS
(Note)
VGS = 0, VDS = 10 V
VGS (OFF) VDS = 10 V, ID = 1 mA
ïYfsï
VGS = 0, VDS = 10 V, f = 1 kHz
Ciss
Crss
GPS
VDS = 10 V, VGS = 0, f = 1 MHz
VGD = -10 V, f = 1 MHz
VDD = 10 V, f = 100 MHz (Figure 1)
NF VDD = 10 V, f = 100 MHz (Figure 1)
Note: IDSS classification Y: 3.0~7.0, GR: 6.0~14.0, BL: 12.0~24.0
Min Typ. Max Unit
¾ ¾ -10 nA
-18 ¾
¾
V
3 ¾ 24 mA
-1.2 -3
¾
V
¾ 7 ¾ mS
¾ 3.5 ¾ pF
¾ ¾ 0.65 pF
¾ 24 ¾ dB
¾ 1.8 3.5 dB
1 2003-04-04
1 page  
2SK192A
5 2003-04-04
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K192A.PDF ] | |
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