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PDF K6T8008C2M Data sheet ( Hoja de datos )

Número de pieza K6T8008C2M
Descripción 1Mx8 bit Low Power and Low Voltage CMOS Static RAM
Fabricantes Samsung semiconductor 
Logotipo Samsung semiconductor Logotipo



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K6T8008C2M Family
Document Title
1Mx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial draft
1.0
www.DataSheet4U.com
Finalize
- Adopt New Code system.
- Improve VIN, VOUT max. on A’ BSOLUTE MAXIMUM RATINGS’from
7.0V to VCC+0.5V.
- Change Icc: from 12 to 10mA
- Change Icc1: from 10 to 12mA
Draft Date
June 22, 1999
Remark
Advance
February 29, 2000 Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.00
February 2000

1 page




K6T8008C2M pdf
K6T8008C2M Family
CMOS SRAM
AC OPERATING CONDITIONS
TEST CONDITIONS(Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load(see right): CL=100pF+1TTL
CL=50pF+1TTL
CL1)
1.Including scope and jig capacitance
AC CHARACTERISTICS (VCC=4.5~5.5V, Commercial product: TA=0 to 70°C, Industrial product: TA=-40 to 85°C)
Parameter List
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Read
Write
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Select to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Write Cycle Time
Chip Select to End of Write
Address Set-up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
Symbol
tRC
tAA
tCO
tOE
tLZ
tOLZ
tHZ
tOHZ
tOH
tWC
tCW
tAS
tAW
tWP
tWR
tWHZ
tDW
tDH
tOW
Speed Bins
55ns
70ns
Min Max Min Max
55 - 70 -
- 55 - 70
- 55 - 70
- 25 - 35
10 - 10 -
5-5-
0 20 0 25
0 20 0 25
10 - 10 -
55 - 70 -
45 - 60 -
0-0-
45 - 60 -
40 - 50 -
0-0-
0 20 0 20
25 - 30 -
0-0-
5-5-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
DATA RETENTION CHARACTERISTICS
Item
Symbol
Test Condition
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
VDR
IDR
tSDR
tRDR
CS1Vcc-0.2V1)
Vcc=3.0V, CS1Vcc-0.2V1)
See data retention waveform
1. CS1Vcc-0.2V,CS2Vcc-0.2V(CS1 controlled) or CS2Vcc-0.2V(CS2 controlled).
2. Industrial product=30µA
Min Typ Max Unit
2.0 - 5.5 V
- - 202) µA
0- -
ms
5- -
5 Revision 1.00
February 2000

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