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PDF IR370BG12DCB Data sheet ( Hoja de datos )
| Número de pieza | IR370BG12DCB | |
| Descripción | Phase Control Thyristors | |
| Fabricantes | International Rectifier | |
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Bulletin I0201J rev. A 02/97
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PHASE CONTROL THYRISTORS
Junction Size:
Square 370 mils
Wafer Size:
4"
VRRM Class:
Passivation Process:
1200 V
Glassivated MESA
Reference IR Packaged Part: IRKT56 Series
IR370BG12DCB
Major Ratings and Characteristics
Parameters
Units Test Conditions
VTM Maximum On-state Voltage
VRRM Reverse Breakdown Voltage
IGT Max. Required DC Gate Current to Trigger
VGT Max. Required DC Gate Voltage to Trigger
IH Holding Current Range
IL Maximum Latching Current
(1) Nitrogen flow on die edge.
1.2 V
1200 V
150 mA
2V
5 to 200 mA
400 mA
TJ = 25°C, IT = 25 A
TJ = 25°C, IRRM = 100 µA
(1)
TJ = 25° C, anode supply = 6 V, resistive load
TJ = 25° C, anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Wafer Diameter
Wafer Thickness
Maximum Width of Sawing Line
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
100% Al, (20 µm)
370 x 370 mils (see drawing)
100 mm, with std. <110> flat
370 µm ± 10 µm
130 µm
0.25 mm diameter minimum
See drawing
Storage in original container, in dessicated
nitrogen, with no contamination
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| PDF Descargar | [ Datasheet IR370BG12DCB.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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