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Número de pieza | K1835 | |
Descripción | MOSFET ( Transistor ) - 2SK1835 | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K1835 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! 2SK1835
Silicon N-Channel MOS FET
Application
High speed power switching
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Features
• High breakdown voltage (VDSS = 1500V)
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switchingregulator
Outline and Equivalent Circuit
TO-3P
D
G
1
2
3 1. Gate
2. Drain
(Flange)
S
3. Source
1 page Drain to Source Saturation Voltage
vs. Gate to Source Voltage
25
Pulse Test
20
3A
15
10 2 A
5 ID = 1 A
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0
4 8 12 16
Gate to Source Voltage VGS (V)
20
Static Drain to Source on State
Resistance vs. Temperature
25
Pulse Test
20 VGS = 15 V
15
ID= 3 A
10
2A
1A
5
0
–40 0 40 80 120 160
Case Temperature TC (°C)
2SK1835
Static Drain to Source on State
Resistance vs. Drain Current
50
Pulse Test
20
10
5
VGS = 10 V
15 V
2
1
0.5
0.2
0.5 1 2
5 10 20
Drain Current I D (A)
Forward Transfer Admittance
vs. Drain Current
10
5 Pulse Test
VDS = 20 V
2
1
0.5
Tc = –25°C
25°C
75°C
0.2
0.1
0.05
0.1 0.2
0.5 1
Drain Current ID (A)
2
5
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet K1835.PDF ] |
Número de pieza | Descripción | Fabricantes |
K1830 | MOSFET ( Transistor ) - 2SK1830 | Toshiba |
K1833 | MOSFET ( Transistor ) - 2SK1833 | Panasonic |
K1834 | Silicon N-Channel Power F-MOS | Panasonic |
K1835 | MOSFET ( Transistor ) - 2SK1835 | Hitachi Semiconductor |
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