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PDF EFA080A-70 Data sheet ( Hoja de datos )
| Número de pieza | EFA080A-70 | |
| Descripción | Low Distortion GaAs Power FET | |
| Fabricantes | Execlics | |
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Excelics
EFA080A-70
DATA SHEET
Low Distortion GaAs Power FET
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www.DataSheet4U.com
NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
+23.5dBm TYPICAL OUTPUT POWER
7.0 dB TYPICAL POWER GAIN AT 12GHz
0.3 X 800 MICRON RECESSED “MUSHROOM” GATE
Si3N4 PASSIVATION
ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Output Power at 1dB Compression
f=12GHz
Vds=5V, Ids=50% Idss
f=18GHz
Gain at 1dB Compression
f=12GHz
Vds=5V, Ids=50% Idss
f=18GHz
Power Added Efficiency at 1dB Compression
Vds=5V, Ids=50% Idss
f=12GHz
Idss Saturated Drain Current Vds=3V, Vgs=0V
Gm
Transconductance
Vds=3V, Vgs=0V
Vp
Pinch-off Voltage
Vds=3V, Ids=2.0mA
BVgd
Drain Breakdown Voltage Igd=1.0mA
BVgs
Source Breakdown Voltage Igs=1.0mA
Rth Thermal Resistance
* Overall Rth depends on case mounting.
20
D
SS
G
All Dimensions In mils.
MIN
21.5
6.0
130
TYP
23.5
23.5
7.0
4.5
30
210
MAX UNIT
dBm
dB
%
300 mA
90 120
mS
-2.0 -3.5 V
-10 -15
V
-6 -14
135*
V
oC/W
44
19
4
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE1 CONTINUOUS2
Vds
Drain-Source Voltage
8V
5V
Vgs Gate-Source Voltage -5V
-4V
Ids Drain Current
Idss
185mA
Igsf
Forward Gate Current
20mA
4mA
Pin Input Power
22dBm
@ 3dB Compression
Tch Channel Temperature 175oC
150 oC
Tstg Storage Temperature
-65/175oC
-65/150 oC
Pt
Total Power Dissipation
1.1W
0.9W
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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