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PDF EFA018A-70 Data sheet ( Hoja de datos )
| Número de pieza | EFA018A-70 | |
| Descripción | Low Distortion GaAs Power FET | |
| Fabricantes | Execlics | |
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Excelics
EFA018A-70
DATA SHEET
Low Distortion GaAs Power FET
• NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
• +18.5dBm TYPICAL OUTPUT POWER
• 10.5dB TYPICAL POWER GAIN AT 12GHz
• TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED
GAIN AT 12GHz
20
D
44
19
4
• 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE
PROVIDES HIGH POWER EFFICIENCY,
SS
G
www.DataSheet4U.com
LINEARITY AND RELIABILITY
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
All Dimensions In mils.
SYMBOLS
PARAMETERS/TEST CONDITIONS
MIN TYP MAX UNIT
P1dB
G1dB
PAE
NF
Ga
Output Power at 1dB Compression
f=12GHz 16.5 18.5
Vds=6V, Ids=50% Idss
f=18GHz
18.5
Gain at 1dB Compression
f=12GHz 9.0 10.5
Vds=6V, Ids=50% Idss
f=18GHz
8.0
Power Added Efficiency at 1dB Compression
Vds=6V, Ids=50% Idss
f=12GHz
33
Noise Figure
f=12GHz
1.1
Vds=2V, Ids=15mA
Associated Gain
f=12GHz
10.5
Vds=2V, Ids=15mA
dBm
dB
%
dB
dB
Idss Saturated Drain Current Vds=3V, Vgs=0V
25 50 80 mA
Gm
Transconductance
Vds=3V, Vgs=0V
20 30
mS
Vp
Pinch-off Voltage
Vds=3V, Ids=1.0 mA
-2.0 -3.5 V
BVgd
Drain Breakdown Voltage Igd=0.5mA
-10 -15
V
BVgs
Source Breakdown Voltage Igs=0.5mA
Rth Thermal Resistance
* Overall Rth depends on case mounting.
-6 -14
480*
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS
ABSOLUTE1 CONTINUOUS2
Vds
Drain-Source Voltage
10V
6V
Vgs Gate-Source Voltage -6V
-4V
Ids Drain Current
Idss
40mA
Igsf
Forward Gate Current
4mA
0.7mA
Pin Input Power
17dBm
@ 3dB Compression
Tch Channel Temperature 175oC
150 oC
Tstg Storage Temperature
-65/175oC
-65/150 oC
Pt
Total Power Dissipation
285mW
240mW
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
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