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Número de pieza | WFF7N60 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Wisdom technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WFF7N60 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Wisdom Semiconductor
WFF7N60
N-Channel MOSFET
Features
■ RDS(on) (Max 1.2 Ω )@VGS=10V
■ Gate Charge (Typical 28nC)
www.DataSheet4U.com ■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Symbol
1. Gate{
{ 2. Drain
●
◀▲
●
●
{ 3. Source
TO-220F
123
Absolute Maximum Ratings *( Drain current limited by junction temperature)
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
600
7.0*
4.4*
28*
±30
420
14.7
4.5
48
0.38
- 55 ~ 150
300
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min.
-
-
Value
Typ.
-
-
Max.
2.6
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.
1 page Gate Charge Test Circuit & Waveform
www.DataSheet4U.com
12V
50KΩ
200nF
300nF
VGS
SameType
asDUT
VGS
10V
VDS
Qgs
3mA
DUT
Qg
Qgd
Charge
10V
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS 90%
VGS10%
td(on)
tr
ton
td(off)
tf
toff
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
RG
VDS
ID
L
DUT
EAS=--21--LIAS2
------B--V--D--S-S-------
BVDSS-VDD
BVDSS
IAS
VDD
ID(t)
VDD
VDS(t)
tp Time
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet WFF7N60.PDF ] |
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