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Número de pieza | TC1301 | |
Descripción | Low Noise and Medium Power GaAs FETs | |
Fabricantes | Transcom | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TC1301 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! TC1301
REV.2_04/12/2004
FEATURES
Low Noise and Medium Power GaAs FETs
• Low Noise Figure:
NF = 0.8 dB Typical at 12 GHz
www.Data•SheeHt4iUg.hcoAm ssociated Gain:
Ga = 10 dB Typical at 12 GHz
• High Dynamic Range:
1 dB Compression Power P-1 = 24 dBm at 12 GHz
• Breakdown Voltage:
BVDGO ≥ 9 V
• Lg = 0.25 µm, Wg = 600 µm
• All-Gold Metallization for High Reliability
• 100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very
low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40
GHz and suitable for low noise and medium power amplifier applications including a wide range of
commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond
pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
CONDITIONS
NF Noise Figure at VDS = 4 V, IDS = 50 mA, f = 12GHz
Ga Associated Gain at VDS = 4 V, IDS = 50 mA, f = 12GHz
P1dB Output Power at 1dB Gain Compression Point , f = 12GHz
VDS = 6 V, IDS = 80 mA
GL Linear Power Gain, f = 12GHz
VDS = 6 V, IDS = 80 mA
IDSS
gm
VP
BVDGO
Rth
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
Transconductance at VDS = 2 V, VGS = 0 V
Pinch-off Voltage at VDS = 2 V, ID = 1.2 mA
Drain-Gate Breakdown Voltage at IDGO =0.3 mA
Thermal Resistance
MIN
9
10
9
TYP
0.8
10
24
11
180
200
-1.0*
12
22
MAX
1.0
UNIT
dB
dB
dBm
dB
mA
mS
Volts
Volts
°C/W
* For the tight control of the pinch-off voltage range, we divide TC1301 into 3 model numbers to fit customer design requirement
(1)TC1301P0710 : Vp = -0.7V to -1.0V (2)TC1301P0811 : Vp = -0.8V to -1.1V (3)TC1301P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for
details.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P1/6
1 page SMALL SIGNAL MODEL, VDS = 4 V, IDS = 50 mA
TC1301
REV.2_04/12/2004
SCHEMATIC
www.DataSheet4U.comLg
Rg Cgd
Cgs Gm
Cds
Ri T
Rs
Ls
Rd Ld
Rds
PARAMETERS
Parameters
Parameters
Lg 0.057 nH Rs
Rg 2.08 Ohm Ls
Cgs 0.959 pF Cds
Ri 5.78 Ohm Rds
Cgd 0.074 pF Rd
Gm 284.0 mS Ld
T 5.54 psec
1.66 Ohm
0.019 nH
0.167 pF
93.2 Ohm
1.358 Ohm
0.038 nH
SMALL SIGNAL MODEL, VDS = 6 V, IDS = 80 mA
SCHEMATIC
Lg Rg
Cgd
Cgs Gm
Cds
Ri T
Rs
Ls
Rd Ld
Rds
PARAMETERS
Parameters
Parameters
Lg 0.056 nH Rs
Rg 1.954 Ohm Ls
Cgs 1.33 pF Cds
Ri 5.58 Ohm Rds
Cgd 0.052 pF Rd
Gm 315 mS Ld
T 5.63 psec
1.808 Ohm
0.016 nH
0.185 pF
90.1 Ohm
1.422 Ohm
0.036 nH
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
P5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TC1301.PDF ] |
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