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PDF FZ800R17KF6CB2 Data sheet ( Hoja de datos )
| Número de pieza | FZ800R17KF6CB2 | |
| Descripción | IGBT-Modules | |
| Fabricantes | eupec GmbH | |
| Logotipo |  |
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R 17 KF6C B2
1700V IGBT Modul mit low loss IGBT der 2. Generation und softer EmCon Diode
1700V IGBT Module with low loss IGBT of 2nd generation and soft EmCon Diode
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
www.DataSheet4UPe.crioomdischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 80 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I2t - value, Diode
Isolations-Prüfspannung
insulation test voltage
tP = 1 ms
VR = 0V, tp = 10ms, TVj = 125°C
RMS, f = 50 Hz, t = 1 min.
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
1700
800
1300
1600
6,6
+/- 20V
800
1600
170
4
V
A
A
A
kW
V
A
A
kA2s
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
IC = 800A, VGE = 15V, Tvj = 25°C
IC = 800A, VGE = 15V, Tvj = 125°C
IC = 60mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V ... +15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
VCE = 1700V, VGE = 0V, Tvj = 25°C
VCE = 1700V, VGE = 0V, Tvj = 125°C
VCE = 0V, VGE = 20V, Tvj = 25°C
VCE sat
min.
-
-
typ.
2,6
3,1
max.
3,1
3,6
VGE(th)
4,5
5,5
6,5
V
V
V
QG - 9,6 - µC
Cies - 52 - nF
Cres - 2,7 - nF
ICES - 0,02 1,5 mA
- 10 80 mA
IGES
-
- 400 nA
prepared by: Alfons Wiesenthal
approved by: Chr. Lübke; 11.08.2000
date of publication: 04.08.2000
revision: 2 (Series)
1(8)
FZ800R17KF6CB2
1 page  
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 800 R 17 KF6C B2
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
1800
IC = f (VGE)
VCE = 20V
1600
www.DataSheet4U.com
1400
1200
Tj = 25°C
Tj = 125°C
1000
800
600
400
200
0
5 6 7 8 9 10 11 12 13
VGE [V]
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
1800
1600
1400
Tvj=25°C
Tvj=125°C
1200
1000
800
600
400
200
0
0,0 0,5 1,0 1,5 2,0
VF [V]
I F = f (VF)
2,5 3,0
5(8)
FZ800R17KF6CB2
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FZ800R17KF6CB2.PDF ] | |
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